Theoretical analysis and performance investigation of ultrafast all-optical Boolean XOR gate with semiconductor optical amplifier-assisted Sagnac interferometer

Zoiros, KE; Papadopoulos, G; Houbavlis, T; Kanellos, GT

dc.contributor.author	Zoiros, KE	en
dc.contributor.author	Papadopoulos, G	en
dc.contributor.author	Houbavlis, T	en
dc.contributor.author	Kanellos, GT	en
dc.date.accessioned	2014-03-01T01:25:18Z
dc.date.available	2014-03-01T01:25:18Z
dc.date.issued	2006	en
dc.identifier.issn	0030-4018	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17636
dc.subject	All-optical Boolean XOR logic	en
dc.subject	All-optical signal processing	en
dc.subject	All-optical switching	en
dc.subject	Semiconductor optical amplifier (SOA)	en
dc.subject	SOA-assisted Sagnac interferometer	en
dc.subject.classification	Optics	en
dc.subject.other	Computer simulation	en
dc.subject.other	Interferometers	en
dc.subject.other	Light amplifiers	en
dc.subject.other	Mathematical models	en
dc.subject.other	Optical systems	en
dc.subject.other	Signal processing	en
dc.subject.other	Switching	en
dc.subject.other	All-optical Boolean XOR logic	en
dc.subject.other	All-optical signal processing	en
dc.subject.other	All-optical switching	en
dc.subject.other	Semiconductor optical amplifier (SOA)	en
dc.subject.other	SOA-assisted Sagnac interferometer	en
dc.subject.other	Gates (transistor)	en
dc.title	Theoretical analysis and performance investigation of ultrafast all-optical Boolean XOR gate with semiconductor optical amplifier-assisted Sagnac interferometer	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.optcom.2005.07.059	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.optcom.2005.07.059	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	A comprehensive theoretical model of an ultrafast all-optical Boolean XOR gate implemented with a semiconductor optical amplifier (SOA)-assisted SagDac interferometer is presented. The model accounts for the SOA small signal gain, linewidth enhancement factor and carrier lifetime, the switching pulses energy and width and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation, the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated and simple design rules are extracted for their proper selection so as to ensure optimum operation. The obtained results are in good agreement with the published experimental measurements and confirm the feasibility of realizing the gate at 10 Gb/s with fairly high performance. The model can be extended for studying more complex all-optical circuits of enhanced functionality in which the XOR gate is the basic building block. (c) 2005 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Optics Communications	en
dc.identifier.doi	10.1016/j.optcom.2005.07.059	en
dc.identifier.isi	ISI:000234614600005	en
dc.identifier.volume	258	en
dc.identifier.issue	2	en
dc.identifier.spage	114	en
dc.identifier.epage	134	en