Band-gap energies and strain effects in CuIn1-xGaxS2 based solar cells

Theodoropoulou, S; Papadimitriou, D; Mamalis, AG; Manolakos, DE; Klenk, R; Lux-Steiner, M-Ch

dc.contributor.author	Theodoropoulou, S	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Mamalis, AG	en
dc.contributor.author	Manolakos, DE	en
dc.contributor.author	Klenk, R	en
dc.contributor.author	Lux-Steiner, M-Ch	en
dc.date.accessioned	2014-03-01T01:25:58Z
dc.date.available	2014-03-01T01:25:58Z
dc.date.issued	2007	en
dc.identifier.issn	0268-1242	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17849
dc.subject	Band Gap	en
dc.subject	Solar Cell	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Copper compounds	en
dc.subject.other	Energy gap	en
dc.subject.other	Optical properties	en
dc.subject.other	Polycrystalline materials	en
dc.subject.other	Reflection	en
dc.subject.other	Thin films	en
dc.subject.other	Band energies	en
dc.subject.other	Electroreflectance (ER) spectroscopy	en
dc.subject.other	Strain effects	en
dc.subject.other	Temperature photoreflectance	en
dc.subject.other	Solar cells	en
dc.title	Band-gap energies and strain effects in CuIn1-xGaxS2 based solar cells	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0268-1242/22/8/019	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0268-1242/22/8/019	en
heal.identifier.secondary	019	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	The optical properties of CuIn1-xGaxS2 (CIGS) polycrystalline films and solar cells were characterized by room and low (20 K) temperature photoreflectance (PR) and electroreflectance (ER) spectroscopy for two different compositions of the CIGS absorber ([Ga]/([In]+[Ga]) ≤ 0.04 and 0.12). The Ea and Eb band energies of the three-split energy gap of ternary and quaternary absorbers were determined at room (300 K) and low (20 K) temperatures. In the ER spectra at 300 K, the Ea and Eb bands were split into four sub-bands originated by differently strained regions of the active absorber layer. The strain evolution in the layer was analysed with respect to the band separation. Modulated reflectance was proven to be a versatile tool for the investigation of material properties. The results of the present study are discussed together with the results of SEM and XRD studies. © 2007 IOP Publishing Ltd.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Semiconductor Science and Technology	en
dc.identifier.doi	10.1088/0268-1242/22/8/019	en
dc.identifier.isi	ISI:000248674100020	en
dc.identifier.volume	22	en
dc.identifier.issue	8	en
dc.identifier.spage	933	en
dc.identifier.epage	940	en