Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Arpatzanis, N; Tassis, DH; Dimitriadis, CA; Charitidis, C; Song, JD; Choi, WJ; Lee, JI

dc.contributor.author	Arpatzanis, N	en
dc.contributor.author	Tassis, DH	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Charitidis, C	en
dc.contributor.author	Song, JD	en
dc.contributor.author	Choi, WJ	en
dc.contributor.author	Lee, JI	en
dc.date.accessioned	2014-03-01T01:26:04Z
dc.date.available	2014-03-01T01:26:04Z
dc.date.issued	2007	en
dc.identifier.issn	0268-1242	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17911
dc.subject	schottky diode	en
dc.subject	Quantum Dot	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Arsenic compounds	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Leakage currents	en
dc.subject.other	Natural frequencies	en
dc.subject.other	Semiconducting gallium compounds	en
dc.subject.other	Semiconductor quantum dots	en
dc.subject.other	Depth profiling measurements	en
dc.subject.other	Low frequency noise measurements	en
dc.subject.other	Reverse current noise spectra	en
dc.subject.other	Space-charge limited current	en
dc.subject.other	Schottky barrier diodes	en
dc.title	Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0268-1242/22/10/002	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0268-1242/22/10/002	en
heal.identifier.secondary	002	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	Schottky contacts on n-type GaAs with embedded InAs quantum dots (QDs) were studied by current-voltage (I-V) and low-frequency noise measurements. For comparison, diodes not containing QDs were investigated as reference devices. A wide distribution of the ideality factor was observed, correlated with the level of the leakage current. Reverse I-V characteristics on the logarithmic scale indicate that the space-charge limited current dominates the carrier transport in these diodes. In all diodes, the reverse current noise spectra show 1/f behaviour, attributed to traps uniformly distributed in energy within the band-gap of the GaAs capping layer. Depth profiling measurements of the 1/f noise power spectral density demonstrate the impact of the QDs on these traps. In diodes containing QDs, in addition to the 1/f noise, a generation- recombination noise is found originating from a deep trap level localized in the vicinity of the QD plane. © 2007 IOP Publishing Ltd.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Semiconductor Science and Technology	en
dc.identifier.doi	10.1088/0268-1242/22/10/002	en
dc.identifier.isi	ISI:000249756000002	en
dc.identifier.volume	22	en
dc.identifier.issue	10	en
dc.identifier.spage	1086	en
dc.identifier.epage	1091	en