Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

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dc.contributor.author Arpatzanis, N en
dc.contributor.author Tassis, DH en
dc.contributor.author Dimitriadis, CA en
dc.contributor.author Charitidis, C en
dc.contributor.author Song, JD en
dc.contributor.author Choi, WJ en
dc.contributor.author Lee, JI en
dc.date.accessioned 2014-03-01T01:26:04Z
dc.date.available 2014-03-01T01:26:04Z
dc.date.issued 2007 en
dc.identifier.issn 0268-1242 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/17911
dc.subject schottky diode en
dc.subject Quantum Dot en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Arsenic compounds en
dc.subject.other Current voltage characteristics en
dc.subject.other Leakage currents en
dc.subject.other Natural frequencies en
dc.subject.other Semiconducting gallium compounds en
dc.subject.other Semiconductor quantum dots en
dc.subject.other Depth profiling measurements en
dc.subject.other Low frequency noise measurements en
dc.subject.other Reverse current noise spectra en
dc.subject.other Space-charge limited current en
dc.subject.other Schottky barrier diodes en
dc.title Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots en
heal.type journalArticle en
heal.identifier.primary 10.1088/0268-1242/22/10/002 en
heal.identifier.secondary http://dx.doi.org/10.1088/0268-1242/22/10/002 en
heal.identifier.secondary 002 en
heal.language English en
heal.publicationDate 2007 en
heal.abstract Schottky contacts on n-type GaAs with embedded InAs quantum dots (QDs) were studied by current-voltage (I-V) and low-frequency noise measurements. For comparison, diodes not containing QDs were investigated as reference devices. A wide distribution of the ideality factor was observed, correlated with the level of the leakage current. Reverse I-V characteristics on the logarithmic scale indicate that the space-charge limited current dominates the carrier transport in these diodes. In all diodes, the reverse current noise spectra show 1/f behaviour, attributed to traps uniformly distributed in energy within the band-gap of the GaAs capping layer. Depth profiling measurements of the 1/f noise power spectral density demonstrate the impact of the QDs on these traps. In diodes containing QDs, in addition to the 1/f noise, a generation- recombination noise is found originating from a deep trap level localized in the vicinity of the QD plane. © 2007 IOP Publishing Ltd. en
heal.publisher IOP PUBLISHING LTD en
heal.journalName Semiconductor Science and Technology en
dc.identifier.doi 10.1088/0268-1242/22/10/002 en
dc.identifier.isi ISI:000249756000002 en
dc.identifier.volume 22 en
dc.identifier.issue 10 en
dc.identifier.spage 1086 en
dc.identifier.epage 1091 en

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