Development of NiO-based thin film structures as efficient H2 gas sensors operating at room temperatures

Brilis, N; Foukaraki, C; Bourithis, E; Tsamakis, D; Giannoudakos, A; Kompitsas, M; Xenidou, T; Boudouvis, A

dc.contributor.author	Brilis, N	en
dc.contributor.author	Foukaraki, C	en
dc.contributor.author	Bourithis, E	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Giannoudakos, A	en
dc.contributor.author	Kompitsas, M	en
dc.contributor.author	Xenidou, T	en
dc.contributor.author	Boudouvis, A	en
dc.date.accessioned	2014-03-01T01:26:08Z
dc.date.available	2014-03-01T01:26:08Z
dc.date.issued	2007	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17933
dc.subject	Au surface sensitization	en
dc.subject	Hydrogen sensing	en
dc.subject	Nickel oxide	en
dc.subject	P-N hetero-junctions	en
dc.subject	Thin films	en
dc.subject	Tin oxide	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Chemical sensors	en
dc.subject.other	Molecular structure	en
dc.subject.other	Oxide films	en
dc.subject.other	Pulsed laser deposition	en
dc.subject.other	Schottky barrier diodes	en
dc.subject.other	Thermal effects	en
dc.subject.other	Deposition temperature	en
dc.subject.other	Gold surface sensitization	en
dc.subject.other	Hydrogen sensing	en
dc.subject.other	P-N hetero-junctions	en
dc.subject.other	Thin films	en
dc.title	Development of NiO-based thin film structures as efficient H2 gas sensors operating at room temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2007.03.147	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2007.03.147	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	P-type NiO thin films have been developed on high resistivity Si and SiO2 substrates by a pulsed laser deposition technique using an ArF* 193 nm excimer laser at deposition temperature of 300 degrees C and in 40 Pa partial oxygen pressure. Structures based on such NiO films as host material in the form of Au-NiO Schottky diodes have been subsequently developed under vacuum. In a different procedure, an n-SnO2 layer has been deposited by a CVD technique on a NiO film to produce a p/n heterojunction. The sensing properties of all above structures have been tested upon exposure to a H-2 flow in air ambient gas at various operating temperature ranging from 30 to 180 degrees C. For the NiO films, the optimum temperature was about 150 degrees C exhibiting a sensitivity of 94%. After surface sensitization of NiO by An the NiO films showed an H, response at operating temperature of 30 degrees C. The sensitivity of p-NiO/n-SnO2 heterojunction devices was extracted from I-V measurements in air and under H-2 flow mixed in air. In this case a dramatic increase of the sensitivity was achieved at operating temperature of 30 degrees C for a forward bias of 0,2 V. (c) 2007 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2007.03.147	en
dc.identifier.isi	ISI:000250497000012	en
dc.identifier.volume	515	en
dc.identifier.issue	24 SPEC. ISS.	en
dc.identifier.spage	8484	en
dc.identifier.epage	8489	en