Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures

Arpatzanis, N; Tsormpatzoglou, A; Dimitriadis, CA; Song, JD; Choi, WJ; Lee, JI; Charitidis, C

dc.contributor.author	Arpatzanis, N	en
dc.contributor.author	Tsormpatzoglou, A	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Song, JD	en
dc.contributor.author	Choi, WJ	en
dc.contributor.author	Lee, JI	en
dc.contributor.author	Charitidis, C	en
dc.date.accessioned	2014-03-01T01:26:12Z
dc.date.available	2014-03-01T01:26:12Z
dc.date.issued	2007	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17967
dc.subject.classification	Physics, Applied	en
dc.subject.other	Defects	en
dc.subject.other	Dissolution	en
dc.subject.other	Heat treatment	en
dc.subject.other	Impurities	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Phase noise	en
dc.subject.other	Rapid thermal annealing	en
dc.subject.other	Schottky barrier diodes	en
dc.subject.other	Self assembly	en
dc.subject.other	Electron concentration	en
dc.subject.other	Noise properties	en
dc.subject.other	Semiconductor quantum dots	en
dc.title	Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.2775536	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.2775536	en
heal.identifier.secondary	054302	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n(+)-GaAs substrates, capped between 0.4 mu m thick n-type GaAs layers with electron concentration of 1x10(16) cm(-3). The effect of rapid thermal annealing at 700 degrees C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment. (C) 2007 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.2775536	en
dc.identifier.isi	ISI:000249474100070	en
dc.identifier.volume	102	en
dc.identifier.issue	5	en