Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:26:21Z
dc.date.available	2014-03-01T01:26:21Z
dc.date.issued	2007	en
dc.identifier.issn	1386-9477	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18027
dc.subject	High-k dielectric	en
dc.subject	Memory devices	en
dc.subject	Metallic	en
dc.subject	Nanocrystals	en
dc.subject	Nanoparticles	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Data storage equipment	en
dc.subject.other	Electric properties	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Gold	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Self assembly	en
dc.subject.other	Capacitance voltage measurements	en
dc.subject.other	Conductance voltage measurements	en
dc.subject.other	Nonvolatile memories	en
dc.subject.other	Voltage memory devices	en
dc.subject.other	MOS devices	en
dc.title	Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.physe.2006.12.024	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.physe.2006.12.024	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO2 layer and are then fully covered by a HfO2 layer. The HfO2 is a high-k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the An nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device. (C) 2007 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Physica E: Low-Dimensional Systems and Nanostructures	en
dc.identifier.doi	10.1016/j.physe.2006.12.024	en
dc.identifier.isi	ISI:000246465000020	en
dc.identifier.volume	38	en
dc.identifier.issue	1-2	en
dc.identifier.spage	85	en
dc.identifier.epage	88	en