Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Boutopoulos, C; Terzis, P; Zergioti, I; Kontos, AG; Zekentes, K; Giannakopoulos, K; Raptis, YS

dc.contributor.author	Boutopoulos, C	en
dc.contributor.author	Terzis, P	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Kontos, AG	en
dc.contributor.author	Zekentes, K	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Raptis, YS	en
dc.date.accessioned	2014-03-01T01:26:33Z
dc.date.available	2014-03-01T01:26:33Z
dc.date.issued	2007	en
dc.identifier.issn	01694332	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18122
dc.subject	Al-doped 4H-SiC surface	en
dc.subject	Electronic and optoelectronic devices	en
dc.subject	Nd:YAG laser	en
dc.subject	UV laser irradiation	en
dc.subject	XeCl excimer laser	en
dc.subject.other	Cross sectional backscattering	en
dc.subject.other	Laser annealing	en
dc.subject.other	UV laser irradiation	en
dc.subject.other	XeCl excimer lasers	en
dc.subject.other	Aluminum compounds	en
dc.subject.other	Annealing	en
dc.subject.other	Crystal structure	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Harmonic generation	en
dc.subject.other	Silicon carbide	en
dc.subject.other	Laser pulses	en
dc.title	Laser annealing of Al implanted silicon carbide: Structural and optical characterization	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.apsusc.2007.02.070	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.apsusc.2007.02.070	en
heal.publicationDate	2007	en
heal.abstract	Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al-doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the third harmonic (355 nm) of a Nd:YAG laser at 4 ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross-sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Reststrahlen band. Transmission electron microscopy analysis showed the formation of columnar polycrystalline structure after the laser annealing process. © 2007 Elsevier B.V. All rights reserved.	en
heal.journalName	Applied Surface Science	en
dc.identifier.doi	10.1016/j.apsusc.2007.02.070	en
dc.identifier.volume	253	en
dc.identifier.issue	19	en
dc.identifier.spage	7912	en
dc.identifier.epage	7916	en