Low-temperature hydrogen sensors based on Au nanoclusters and Schottky contacts on ZnO films deposited by pulsed laser deposition on Si and SiO2 substrates

Pandis, C; Brilis, N; Bourithis, E; Tsamakis, D; Ali, H; Krishnamoorthy, S; Iliadis, AA; Kompitsas, M

dc.contributor.author	Pandis, C	en
dc.contributor.author	Brilis, N	en
dc.contributor.author	Bourithis, E	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Ali, H	en
dc.contributor.author	Krishnamoorthy, S	en
dc.contributor.author	Iliadis, AA	en
dc.contributor.author	Kompitsas, M	en
dc.date.accessioned	2014-03-01T01:26:33Z
dc.date.available	2014-03-01T01:26:33Z
dc.date.issued	2007	en
dc.identifier.issn	1530-437X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18132
dc.subject	gas detectors	en
dc.subject	pulsed lasers	en
dc.subject	Schottky diodes	en
dc.subject	thin-film devices	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	H-2 SENSING PROPERTIES	en
dc.subject.other	ROOM-TEMPERATURE	en
dc.subject.other	ZINC-OXIDE	en
dc.subject.other	THIN-FILMS	en
dc.subject.other	GAS SENSORS	en
dc.subject.other	NANORODS	en
dc.subject.other	CONDUCTIVITY	en
dc.title	Low-temperature hydrogen sensors based on Au nanoclusters and Schottky contacts on ZnO films deposited by pulsed laser deposition on Si and SiO2 substrates	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/JSEN.2007.891944	en
heal.identifier.secondary	http://dx.doi.org/10.1109/JSEN.2007.891944	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	Unintentionally doped n-type ZnO thin films deposited on Si and SiO2 substrates by pulsed laser deposition (PLD) techniques, were functionalized as H-2 gas sensors by a) incorporating An nanoclusters in the surface, and b) developing An Schottky diodes on ZnO. The influence of the catalytic action of the An nanoclusters on the sensing properties of the devices was, examined and found to provide faster response times at a reduced working temperature of 150 degrees C. The field-assisted sensing of the An Schottky diodes demonstrated for the first time in this system, a more dramatic reduction in the working temperature of the sensor to nearly room temperature.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE SENSORS JOURNAL	en
dc.identifier.doi	10.1109/JSEN.2007.891944	en
dc.identifier.isi	ISI:000245226600022	en
dc.identifier.volume	7	en
dc.identifier.issue	3-4	en
dc.identifier.spage	448	en
dc.identifier.epage	454	en