Nickel nanoparticle deposition at room temperature for memory applications

Verrelli, E; Tsoukalas, D; Giannakopoulos, K; Kouvatsos, D; Normand, P; Ioannou, DE

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Kouvatsos, D	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Ioannou, DE	en
dc.date.accessioned	2014-03-01T01:26:44Z
dc.date.available	2014-03-01T01:26:44Z
dc.date.issued	2007	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18202
dc.subject	Metallic nanoparticles	en
dc.subject	Non volatile memory	en
dc.subject	PVD	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	High-vacuum technique	en
dc.subject.other	Room temperature	en
dc.subject.other	Time charge storage	en
dc.subject.other	Electric charge	en
dc.subject.other	Electric insulators	en
dc.subject.other	Nanostructures	en
dc.subject.other	Nickel	en
dc.subject.other	Deposition	en
dc.title	Nickel nanoparticle deposition at room temperature for memory applications	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2007.04.078	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2007.04.078	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior. © 2007 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2007.04.078	en
dc.identifier.isi	ISI:000247378600036	en
dc.identifier.volume	84	en
dc.identifier.issue	9-10	en
dc.identifier.spage	1994	en
dc.identifier.epage	1997	en