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Nickel nanoparticle deposition at room temperature for memory applications

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dc.contributor.author Verrelli, E en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Giannakopoulos, K en
dc.contributor.author Kouvatsos, D en
dc.contributor.author Normand, P en
dc.contributor.author Ioannou, DE en
dc.date.accessioned 2014-03-01T01:26:44Z
dc.date.available 2014-03-01T01:26:44Z
dc.date.issued 2007 en
dc.identifier.issn 0167-9317 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/18202
dc.subject Metallic nanoparticles en
dc.subject Non volatile memory en
dc.subject PVD en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Nanoscience & Nanotechnology en
dc.subject.classification Optics en
dc.subject.classification Physics, Applied en
dc.subject.other High-vacuum technique en
dc.subject.other Room temperature en
dc.subject.other Time charge storage en
dc.subject.other Electric charge en
dc.subject.other Electric insulators en
dc.subject.other Nanostructures en
dc.subject.other Nickel en
dc.subject.other Deposition en
dc.title Nickel nanoparticle deposition at room temperature for memory applications en
heal.type journalArticle en
heal.identifier.primary 10.1016/j.mee.2007.04.078 en
heal.identifier.secondary http://dx.doi.org/10.1016/j.mee.2007.04.078 en
heal.language English en
heal.publicationDate 2007 en
heal.abstract In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior. © 2007 Elsevier B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Microelectronic Engineering en
dc.identifier.doi 10.1016/j.mee.2007.04.078 en
dc.identifier.isi ISI:000247378600036 en
dc.identifier.volume 84 en
dc.identifier.issue 9-10 en
dc.identifier.spage 1994 en
dc.identifier.epage 1997 en


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