Proton radiation tolerance of nanocrystal memories

Verrelli, E; Anastassiadis, I; Tsoukalas, D; Kokkoris, M; Vlastou, R; Dimitrakis, P; Normand, P

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Anastassiadis, I	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.date.accessioned	2014-03-01T01:26:56Z
dc.date.available	2014-03-01T01:26:56Z
dc.date.issued	2007	en
dc.identifier.issn	1386-9477	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18295
dc.subject	Charge loss mechanism	en
dc.subject	Interface states	en
dc.subject	Nanocrystal memory	en
dc.subject	Proton radiation	en
dc.subject	Retention	en
dc.subject	Silicon nanocrystals	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Ion beams	en
dc.subject.other	MOS devices	en
dc.subject.other	Nanocrystalline materials	en
dc.subject.other	Proton irradiation	en
dc.subject.other	Charge loss mechanism	en
dc.subject.other	Interface states	en
dc.subject.other	Nanocrystal memory	en
dc.subject.other	Silicon nanocrystals	en
dc.subject.other	Surface density	en
dc.subject.other	Data storage equipment	en
dc.title	Proton radiation tolerance of nanocrystal memories	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.physe.2006.12.013	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.physe.2006.12.013	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	We report on proton radiation tolerance of Si-nanocrystal (Si-NCs) MOS structures aiming at non-volatile memory applications. SiNCs were formed by low-energy (1 keV) ion-beam-synthesis within a 9 nm thick Sio(2) layer. A 2-D layer of Si-NCs with 3 nm mean diameter and 10(12)cm(-2) surface density was successfully achieved. After fabrication of Al capacitors, samples with and without Si-NCs were 1.5 and 6.5 MeV proton were irradiated at doses ranging from I Mrad (SiO2) to 120 Mrad NOD. Significant irradiation-dose-dependent shifts are detected in the C-V curves of the NC-MOS cells and programmed cells are found to undergo bit flip. Despite the above, the attainable memory windows after write/erase operations remain unchanged. Retention time characteristics at room temperature for the write and erase states of irradiated and non-irradiated samples reveal that even after an irradiation dose as high as 120 Mrad N(SiO2) the devices still exhibit long time charge storage behavior. We observe that the erase state flat-band voltage decay rate does not depend on the irradiation-dose while the opposite happens for the write state flat-band voltage decay rate which is found to be directly dependent on Dit values giving insight to the physics of the discharging mechanisms. (C) 2007 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Physica E: Low-Dimensional Systems and Nanostructures	en
dc.identifier.doi	10.1016/j.physe.2006.12.013	en
dc.identifier.isi	ISI:000246465000016	en
dc.identifier.volume	38	en
dc.identifier.issue	1-2	en
dc.identifier.spage	67	en
dc.identifier.epage	70	en