Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopy

Theodoropoulou, S; Papadimitriou, D; Doka, S; Schedel-Niedrig, Th; Lux-Steiner, MCh

dc.contributor.author	Theodoropoulou, S	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Doka, S	en
dc.contributor.author	Schedel-Niedrig, Th	en
dc.contributor.author	Lux-Steiner, MCh	en
dc.date.accessioned	2014-03-01T01:27:19Z
dc.date.available	2014-03-01T01:27:19Z
dc.date.issued	2007	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18395
dc.subject	Ge doped CuGaSe2 films	en
dc.subject	Photoluminescence	en
dc.subject	Raman	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Band structure	en
dc.subject.other	Copper alloys	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Ion implantation	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Bond reorientation	en
dc.subject.other	Raman bands	en
dc.subject.other	Raman mode intensities	en
dc.subject.other	Structural disorder	en
dc.subject.other	Thin films	en
dc.title	Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopy	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2006.12.163	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2006.12.163	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	The structural properties of Ge doped polycrystalline CuGaSe2 films with potential applications in solar cell device technology have been studied by Raman spectroscopy at 300 K and by Photoluminescence (PL) spectroscopy at 300 K and 2 K. The films were intentionally doped with max. 200 keV Ge ions using one- and three-stage ion implantation processes. The Raman spectra of as grown films are dominated by the A(1) -mode (breathing mode) of the CuGaSe2 absorber at 184 cm(-1). It was found, that in doped films the Raman mode intensities are reduced and the B(2)modes (TO at 249 cm(-1) and LO at 273 cm(-1)) take over. This implies an increase in structural disorder induced, probably, by bond reorientation effects that favor excitation of asymmetric lattice vibrations (B-2) instead of the symmetric ones (A(1)). Moreover, it was found, that the Raman bands of doped films exhibit asymmetric broadening representative of a Fano line-shape. Changes were more pronounced in films doped at one-stage. The PL-emission of films subjected to one-stage process was enhanced, which supports an increase in structural disorder particularly for these films. On the contrary, for films doped in three-stages, the PL bands are less intensive and the Raman bands are less broadened. (C) 2006 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2006.12.163	en
dc.identifier.isi	ISI:000246831600035	en
dc.identifier.volume	515	en
dc.identifier.issue	15 SPEC. ISS.	en
dc.identifier.spage	5904	en
dc.identifier.epage	5908	en