A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs

Krokidis, G; Xanthakis, JP; Uzunoglu, NK

dc.contributor.author	Krokidis, G	en
dc.contributor.author	Xanthakis, JP	en
dc.contributor.author	Uzunoglu, NK	en
dc.date.accessioned	2014-03-01T01:27:40Z
dc.date.available	2014-03-01T01:27:40Z
dc.date.issued	2008	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18533
dc.subject	HEMT	en
dc.subject	Modeling	en
dc.subject	Poisson	en
dc.subject	Schrödinger	en
dc.subject	Short-channel effects	en
dc.subject	Threshold voltage	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	High electron mobility transistors	en
dc.subject.other	Schrodinger equation	en
dc.subject.other	Threshold voltage	en
dc.subject.other	Density of states (DOS)	en
dc.subject.other	Quantum representation	en
dc.subject.other	Short channel effects	en
dc.subject.other	Solid state physics	en
dc.title	A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.sse.2007.10.021	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2007.10.021	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	We have performed a fully 2-dimensional (2D) Poisson, Schrodinger and continuity equations modeling of nanometer gate HEMTs. For the electron density n(x,y) in the channel we use the discrete levels obtained from the Schrodinger equation and the corresponding 1 D density of states (DOS), so that a fully quantum representation of n is obtained. The threshold voltage reduction Delta V-T we obtain at small V-DS is in very good agreement with experimental values. By comparison with our classical calculations (a subset of our model) we deduce that quantum effects are not important for the calculation of Delta V-T. However quantum effects become increasingly important as V-GS increases beyond V-T at small V-DS The deviation between classical and quantum values in the current are of the order of 40 - 80% depending oil the device. As V-DS increases and reaches saturation this percentage deviation decreases but its absolute value (in mA/mm) increases. These effects become more acute as the gate length becomes shorter. (c) 2007 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2007.10.021	en
dc.identifier.isi	ISI:000255581000005	en
dc.identifier.volume	52	en
dc.identifier.issue	5	en
dc.identifier.spage	625	en
dc.identifier.epage	631	en