A scalable advanced RF IC design-oriented MOSFET model

Bucher, M; Bazigos, A; Yoshitomi, S; Itoh, N

dc.contributor.author	Bucher, M	en
dc.contributor.author	Bazigos, A	en
dc.contributor.author	Yoshitomi, S	en
dc.contributor.author	Itoh, N	en
dc.date.accessioned	2014-03-01T01:27:47Z
dc.date.available	2014-03-01T01:27:47Z
dc.date.issued	2008	en
dc.identifier.issn	1096-4290	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18575
dc.subject	Analogue/RF IC design	en
dc.subject	Compact model	en
dc.subject	MOSFET	en
dc.subject	NQS effect	en
dc.subject	RF modelling	en
dc.subject	Scaling	en
dc.subject.classification	Computer Science, Interdisciplinary Applications	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.other	Bias conditions	en
dc.subject.other	Channel lengths	en
dc.subject.other	CMOS technologies	en
dc.subject.other	Compact modeling	en
dc.subject.other	Large range	en
dc.subject.other	Long channel devices	en
dc.subject.other	MOSFET modeling	en
dc.subject.other	Parasitics	en
dc.subject.other	Quasi Static	en
dc.subject.other	RF IC design	en
dc.subject.other	RF measurements	en
dc.subject.other	Scaling behaviour	en
dc.subject.other	Short channel devices	en
dc.subject.other	MOSFET devices	en
dc.title	A scalable advanced RF IC design-oriented MOSFET model	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/mmce.20288	en
heal.identifier.secondary	http://dx.doi.org/10.1002/mmce.20288	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	This article presents a validation of the EKV3 MOSFET compact model dedicated to the design of analogue/RF ICs using advanced CMOS technology. The EKV3 model is compared with DC, CV and RF measurements up to 20 GHz of a 110 nm CMOS technology. The scaling behaviour over a large range of channel lengths and bias conditions is presented. Long-channel devices show significant non-quasi static effects while in short-channel devices the parasitics modelling is critical. This is illustrated with Y-parameters and f(t) vs. I-D in NMOS and PMOS devices, showing good overall RF modelling abilities of the EKV3 MOSFET model. (C) 2008 Wiley Periodicals, Inc.	en
heal.publisher	JOHN WILEY & SONS INC	en
heal.journalName	International Journal of RF and Microwave Computer-Aided Engineering	en
dc.identifier.doi	10.1002/mmce.20288	en
dc.identifier.isi	ISI:000256995800003	en
dc.identifier.volume	18	en
dc.identifier.issue	4	en
dc.identifier.spage	314	en
dc.identifier.epage	325	en