An efficient channel segmentation approach for a large-signal NQS MOSFET model

Bucher, M; Bazigos, A

dc.contributor.author	Bucher, M	en
dc.contributor.author	Bazigos, A	en
dc.date.accessioned	2014-03-01T01:27:53Z
dc.date.available	2014-03-01T01:27:53Z
dc.date.issued	2008	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18620
dc.subject	Channel segmentation	en
dc.subject	Compact MOSFET model	en
dc.subject	EKV	en
dc.subject	Non-quasi-static	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Benchmarking	en
dc.subject.other	Carrier concentration	en
dc.subject.other	Computer simulation	en
dc.subject.other	Mathematical models	en
dc.subject.other	Channel segmentation	en
dc.subject.other	Compact MOSFET models	en
dc.subject.other	Non-quasi-static	en
dc.subject.other	MOSFET devices	en
dc.title	An efficient channel segmentation approach for a large-signal NQS MOSFET model	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.sse.2007.08.015	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2007.08.015	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	This paper presents an efficient formulation of a channel segmentation based approach to non-quasi-static modelling of the MOS transistor, in the context of a charge-based MOSFET model. In this minimal channel segmentation approach, only the essential charge equations are evaluated for each channel segment while other effects are handled at device level. As a result, simulation time is drastically reduced compared to a full channel segmentation approach. The model is validated versus measurement up to 10 GHz and passes relevant benchmark tests. (c) 2007 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2007.08.015	en
dc.identifier.isi	ISI:000253310200021	en
dc.identifier.volume	52	en
dc.identifier.issue	2	en
dc.identifier.spage	275	en
dc.identifier.epage	281	en