Compositional and temperature dependence of the energy band gap of Cu xInySe2 epitaxial layers

Xu, HY; Papadimitriou, D; Zoumpoulakis, L; Simitzis, J; Lux-Steiner, M-Ch

dc.contributor.author	Xu, HY	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Zoumpoulakis, L	en
dc.contributor.author	Simitzis, J	en
dc.contributor.author	Lux-Steiner, M-Ch	en
dc.date.accessioned	2014-03-01T01:28:03Z
dc.date.available	2014-03-01T01:28:03Z
dc.date.issued	2008	en
dc.identifier.issn	0022-3727	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18690
dc.subject	Band Gap	en
dc.subject	Temperature Dependence	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Copper	en
dc.subject.other	Copper alloys	en
dc.subject.other	Energy gap	en
dc.subject.other	Gallium alloys	en
dc.subject.other	Real time systems	en
dc.subject.other	Temperature distribution	en
dc.subject.other	Energy-band gaps	en
dc.subject.other	Temperature dependences	en
dc.subject.other	Band structure	en
dc.title	Compositional and temperature dependence of the energy band gap of Cu xInySe2 epitaxial layers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0022-3727/41/16/165102	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0022-3727/41/16/165102	en
heal.identifier.secondary	165102	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	The compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers grown by metal-organic chemical vapour deposition on GaAs(1 0 0) substrates was studied by photoreflectance (PR) spectroscopy. Investigation of the compositional dependence at 20 K showed a slight increase in the energy gap with the increase in the [Cu]/[In] fraction. Line-shape analysis of PR spectra indicated that near stoichiometric and slightly Cu-rich CuInSe2 layers have a better crystallinity than In-rich ones. Investigation of the temperature dependence for both Cu-rich and In-rich modifications, in the range 300-20 K, demonstrated a red-shift of band-gap energies with the decrease in temperature below 70 K and provided experimental evidence of the anomalous temperature dependence of the energy gap in this material. Moreover, a combination of modulation power-dependent PR and photoluminescence studies at 20 K revealed that the optical emission interfering in the PR spectra at energies below the band-gap energy originates from donor-acceptor pair recombination and diminishes at low modulation powers. © 2008 IOP Publishing Ltd.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics D: Applied Physics	en
dc.identifier.doi	10.1088/0022-3727/41/16/165102	en
dc.identifier.isi	ISI:000258221100031	en
dc.identifier.volume	41	en
dc.identifier.issue	16	en