Diffusion and activation of phosphorus in germanium

Tsouroutas, P; Tsoukalas, D; Zergioti, I; Cherkashin, N; Claverie, A

dc.contributor.author	Tsouroutas, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T01:28:09Z
dc.date.available	2014-03-01T01:28:09Z
dc.date.issued	2008	en
dc.identifier.issn	13698001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18736
dc.subject	Activation	en
dc.subject	Annealing	en
dc.subject	Diffusion	en
dc.subject	Germanium	en
dc.subject	Laser	en
dc.subject	Phosphorus	en
dc.subject	Simulation	en
dc.subject.other	Activation	en
dc.subject.other	Activation behavior	en
dc.subject.other	Annealed samples	en
dc.subject.other	Annealing process	en
dc.subject.other	Chemical profiles	en
dc.subject.other	Conventional annealing	en
dc.subject.other	Dopant diffusion	en
dc.subject.other	Dopant diffusivity	en
dc.subject.other	Dopant loss	en
dc.subject.other	Dopant profile	en
dc.subject.other	Intrinsic diffusion	en
dc.subject.other	Laser annealing	en
dc.subject.other	Melting threshold	en
dc.subject.other	Nd-YAG lasers	en
dc.subject.other	Out-diffusion	en
dc.subject.other	Research reports	en
dc.subject.other	Segregation model	en
dc.subject.other	Simulation	en
dc.subject.other	Thermal processing	en
dc.subject.other	Vacancy models	en
dc.subject.other	Van der Pauw method	en
dc.subject.other	Annealing	en
dc.subject.other	Diffusion	en
dc.subject.other	Electric resistance	en
dc.subject.other	Experiments	en
dc.subject.other	Germanium	en
dc.subject.other	Ion bombardment	en
dc.subject.other	Ion implantation	en
dc.subject.other	Lasers	en
dc.subject.other	Neodymium lasers	en
dc.subject.other	Phosphorus	en
dc.subject.other	Pulsed laser applications	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Simulators	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Simulated annealing	en
dc.title	Diffusion and activation of phosphorus in germanium	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mssp.2008.09.005	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mssp.2008.09.005	en
heal.publicationDate	2008	en
heal.abstract	In this work we investigate the diffusion and the activation behavior of implanted phosphorus in Ge. We used both conventional thermal processing as well as laser annealing by pulsed ns Nd-YAG laser. Chemical profiles were obtained by secondary-ion-mass spectrometry (SIMS) and sheet resistance was estimated by Van der Pauw method. These measurements demonstrated a box-shaped dopant profile for both conventional and laser annealed samples which are in agreement with other research reports indicating enhanced dopant diffusivity. From these experiments and critical comparison with other studies we conclude about the value of the intrinsic diffusion coefficient and we discuss the validity of the doubly charged vacancy model in simulating our experiments. To more accurately account for these parameters we have also implemented a pileup and a segregation model to simulate the dopant loss due to outdiffusion of phosphorus during the annealing process. In order to understand the influence of defects on transient dopant diffusion as well as on outdiffusion we have also annealed P implanted Ge prior to conventional annealing with laser above melting threshold to eliminate ion implantation defects as these are monitored by transmission electron microscopy. © 2008 Elsevier Ltd. All rights reserved.	en
heal.journalName	Materials Science in Semiconductor Processing	en
dc.identifier.doi	10.1016/j.mssp.2008.09.005	en
dc.identifier.volume	11	en
dc.identifier.issue	5	en
dc.identifier.spage	372	en
dc.identifier.epage	377	en