Electron beam lithography simulation for the patterning of extreme ultraviolet masks

Tsikrikas, N; Patsis, GP; Raptis, I; Gerardino, A; Quesnel, E

dc.contributor.author	Tsikrikas, N	en
dc.contributor.author	Patsis, GP	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Gerardino, A	en
dc.contributor.author	Quesnel, E	en
dc.date.accessioned	2014-03-01T01:28:15Z
dc.date.available	2014-03-01T01:28:15Z
dc.date.issued	2008	en
dc.identifier.issn	0021-4922	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18778
dc.subject	Electron-beam lithography	en
dc.subject	EUV lithography	en
dc.subject	Layout	en
dc.subject	Metrology	en
dc.subject	Multilayer substrates	en
dc.subject	Simulation	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Electron beams	en
dc.subject.other	Electron guns	en
dc.subject.other	Electrons	en
dc.subject.other	Energy dissipation	en
dc.subject.other	Extreme ultraviolet lithography	en
dc.subject.other	Laser pulses	en
dc.subject.other	Masks	en
dc.subject.other	Molybdenum	en
dc.subject.other	Multilayers	en
dc.subject.other	Particle beams	en
dc.subject.other	Silicon	en
dc.subject.other	Ultraviolet devices	en
dc.subject.other	EUV lithography	en
dc.subject.other	Layout	en
dc.subject.other	Metrology	en
dc.subject.other	Multilayer substrates	en
dc.subject.other	Simulation	en
dc.subject.other	Electron beam lithography	en
dc.title	Electron beam lithography simulation for the patterning of extreme ultraviolet masks	en
heal.type	journalArticle	en
heal.identifier.primary	10.1143/JJAP.47.4909	en
heal.identifier.secondary	http://dx.doi.org/10.1143/JJAP.47.4909	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo-Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100nm reproduced experimental metrology trends on the fine features of the layout. © 2008 The Japan Society of Applied Physics.	en
heal.publisher	INST PURE APPLIED PHYSICS	en
heal.journalName	Japanese Journal of Applied Physics	en
dc.identifier.doi	10.1143/JJAP.47.4909	en
dc.identifier.isi	ISI:000257260500013	en
dc.identifier.volume	47	en
dc.identifier.issue	6 PART 2	en
dc.identifier.spage	4909	en
dc.identifier.epage	4912	en