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Electron beam lithography simulation for the patterning of extreme ultraviolet masks

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dc.contributor.author Tsikrikas, N en
dc.contributor.author Patsis, GP en
dc.contributor.author Raptis, I en
dc.contributor.author Gerardino, A en
dc.contributor.author Quesnel, E en
dc.date.accessioned 2014-03-01T01:28:15Z
dc.date.available 2014-03-01T01:28:15Z
dc.date.issued 2008 en
dc.identifier.issn 0021-4922 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/18778
dc.subject Electron-beam lithography en
dc.subject EUV lithography en
dc.subject Layout en
dc.subject Metrology en
dc.subject Multilayer substrates en
dc.subject Simulation en
dc.subject.classification Physics, Applied en
dc.subject.other Electron beams en
dc.subject.other Electron guns en
dc.subject.other Electrons en
dc.subject.other Energy dissipation en
dc.subject.other Extreme ultraviolet lithography en
dc.subject.other Laser pulses en
dc.subject.other Masks en
dc.subject.other Molybdenum en
dc.subject.other Multilayers en
dc.subject.other Particle beams en
dc.subject.other Silicon en
dc.subject.other Ultraviolet devices en
dc.subject.other EUV lithography en
dc.subject.other Layout en
dc.subject.other Metrology en
dc.subject.other Multilayer substrates en
dc.subject.other Simulation en
dc.subject.other Electron beam lithography en
dc.title Electron beam lithography simulation for the patterning of extreme ultraviolet masks en
heal.type journalArticle en
heal.identifier.primary 10.1143/JJAP.47.4909 en
heal.identifier.secondary http://dx.doi.org/10.1143/JJAP.47.4909 en
heal.language English en
heal.publicationDate 2008 en
heal.abstract Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo-Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100nm reproduced experimental metrology trends on the fine features of the layout. © 2008 The Japan Society of Applied Physics. en
heal.publisher INST PURE APPLIED PHYSICS en
heal.journalName Japanese Journal of Applied Physics en
dc.identifier.doi 10.1143/JJAP.47.4909 en
dc.identifier.isi ISI:000257260500013 en
dc.identifier.volume 47 en
dc.identifier.issue 6 PART 2 en
dc.identifier.spage 4909 en
dc.identifier.epage 4912 en


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