High-density plasma silicon oxide thin films grown at room-temperature

Vlachopoulou, ME; Dimitrakis, P; Tserepi, A; Vamvakas, VEm; Koliopoulou, S; Normand, P; Gogolides, E; Tsoukalas, D

dc.contributor.author	Vlachopoulou, ME	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Vamvakas, VEm	en
dc.contributor.author	Koliopoulou, S	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:28:38Z
dc.date.available	2014-03-01T01:28:38Z
dc.date.issued	2008	en
dc.identifier.issn	01679317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18881
dc.subject	Low temperature oxidation	en
dc.subject	Plasma oxidation	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Plasmas	en
dc.subject.other	Silicon on insulator technology	en
dc.subject.other	Temperature distribution	en
dc.subject.other	High-density plasmas	en
dc.subject.other	Low temperature oxidation	en
dc.subject.other	Room temperature	en
dc.subject.other	Thin films	en
dc.title	High-density plasma silicon oxide thin films grown at room-temperature	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2008.01.010	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2008.01.010	en
heal.publicationDate	2008	en
heal.abstract	The fabrication at room-temperature of thin (<8 nm) silicon oxide films has been achieved, in a high-density helicon plasma source reactor using Ar/O2 mixture, exhibiting relatively low concentration of fixed oxide and interface charges, after annealing. The developed plasma oxidation process was employed in order to fabricate SOI-MOSFETs at low thermal budget with competitive operating characteristics. © 2008 Elsevier B.V. All rights reserved.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2008.01.010	en
dc.identifier.volume	85	en
dc.identifier.issue	5-6	en
dc.identifier.spage	1245	en
dc.identifier.epage	1247	en