Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

Florakis, A; Misra, N; Grigoropoulos, C; Giannakopoulos, K; Halimaoui, A; Tsoukalas, D

dc.contributor.author	Florakis, A	en
dc.contributor.author	Misra, N	en
dc.contributor.author	Grigoropoulos, C	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Halimaoui, A	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:28:52Z
dc.date.available	2014-03-01T01:28:52Z
dc.date.issued	2008	en
dc.identifier.issn	0921-5107	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19010
dc.subject	Boron diffusion	en
dc.subject	Plasma doping	en
dc.subject	Sub-melt laser annealing	en
dc.subject	Ultra shallow junction	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Annealing	en
dc.subject.other	Boron	en
dc.subject.other	Boron compounds	en
dc.subject.other	Diffusion in solids	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Electric resistance	en
dc.subject.other	Electric resistance measurement	en
dc.subject.other	Excimer lasers	en
dc.subject.other	Gas lasers	en
dc.subject.other	Krypton	en
dc.subject.other	Lasers	en
dc.subject.other	MOS devices	en
dc.subject.other	Nonmetals	en
dc.subject.other	Plasmas	en
dc.subject.other	Pulsed laser deposition	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Silicon	en
dc.subject.other	Surface defects	en
dc.subject.other	32nm nodes	en
dc.subject.other	Atomic forces	en
dc.subject.other	Boron diffusion	en
dc.subject.other	Boron diffusions	en
dc.subject.other	Electrical activations	en
dc.subject.other	Excimer	en
dc.subject.other	Excimer Laser Annealing	en
dc.subject.other	KRF lasers	en
dc.subject.other	Laser annealing	en
dc.subject.other	Low thermal budgets	en
dc.subject.other	Morphological characteristics	en
dc.subject.other	Plasma doping	en
dc.subject.other	Pulse durations	en
dc.subject.other	Recrystallization	en
dc.subject.other	Roadmap	en
dc.subject.other	Shallow junctions	en
dc.subject.other	Sheet resistance measurements	en
dc.subject.other	Sub-melt laser annealing	en
dc.subject.other	Time scales	en
dc.subject.other	Transmission electrons	en
dc.subject.other	Ultra shallow junction	en
dc.subject.other	Van der Pauw	en
dc.subject.other	Pulsed laser applications	en
dc.title	Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mseb.2008.09.035	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mseb.2008.09.035	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	In this work we present results on sub-melt Excimer laser annealing in order to obtain difussionless activation of Boron for the creation of ultra shallow P-MOS devices. For the fulfillment of the strict requirements imposed by the ITRS roadmap for the 32 nm node we have implemented two emerging techniques: non-melt laser annealing and BF3 Plasma Doping implantation (PLAD). By using PLAD, we were able to create ultra shallow and abrupt as implanted profiles. On the other hand, by performing laser annealing on the samples in the sub-melt regime, we can achieve high levels of electrical activation, while practically eliminating Boron diffusion, due to its capability to deliver low thermal budget in the sub-microsecond time scale. An Excimer KrF laser (lambda = 248 nm and pulse duration 38 ns) has been used. The post annealing characterization of the samples included SIMS and Van Der Pauw Sheet resistance measurements. SIMS data indicate almost difussionless dopant behavior with R-s values at 680 Omega/sq. We have concluded our analysis with the examination of the morphological characteristics both of the surface of the sample using Atomic Force Microscopy (AFM) and the evolution of the recrystallization of the amorphized layers and the removal of the defects by means of cross-section Transmission Electron Microscopy. (C) 2008 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	en
dc.identifier.doi	10.1016/j.mseb.2008.09.035	en
dc.identifier.isi	ISI:000262187600008	en
dc.identifier.volume	154-155	en
dc.identifier.issue	1-3	en
dc.identifier.spage	39	en
dc.identifier.epage	42	en