Processing effects on the dissolution properties of thin chemically amplified photoresist films

Drygiannakis, D; Raptis, I; Patsis, GP; Boudouvis, A; vanWerden, K

dc.contributor.author	Drygiannakis, D	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Patsis, GP	en
dc.contributor.author	Boudouvis, A	en
dc.contributor.author	vanWerden, K	en
dc.date.accessioned	2014-03-01T01:29:04Z
dc.date.available	2014-03-01T01:29:04Z
dc.date.issued	2008	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19102
dc.subject	Dissolution rate monitor	en
dc.subject	High resolution lithography	en
dc.subject	Mesoscale simulation	en
dc.subject	Thin films	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Computer simulation	en
dc.subject.other	Dissolution	en
dc.subject.other	Film thickness	en
dc.subject.other	Lithography	en
dc.subject.other	Photoresists	en
dc.subject.other	Stochastic models	en
dc.subject.other	Dissolution rate monitor	en
dc.subject.other	High resolution lithography	en
dc.subject.other	Mesoscale simulation	en
dc.subject.other	Thermal processing	en
dc.subject.other	Thin films	en
dc.title	Processing effects on the dissolution properties of thin chemically amplified photoresist films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2007.12.071	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2007.12.071	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	Resist film thickness is anticipated to be 60 nm in the 22 nm technology node setting significant processing challenges due to resist non-bulk behavior. The changes in the dissolution rate of a positive DUV polymer based chemically amplified resist due to various processing conditions such as film thickness, exposure dose, and thermal processing conditions, are experimentally investigated. It is quantified among others, the way an increase of PAB temperature deteriorates dissolution rate at low exposure dose, while in higher exposure doses increasing PAB temperature enhances dissolution rate. Also, an analytic model for the dissolution rate is imported on a stochastic lithography simulator and first quantitative results for thin films are reported. (C) 2008 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2007.12.071	en
dc.identifier.isi	ISI:000257413400054	en
dc.identifier.volume	85	en
dc.identifier.issue	5-6	en
dc.identifier.spage	955	en
dc.identifier.epage	958	en