Study of charge storage characteristics of memory devices embedded with metallic nanoparticles

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Normand, P; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:29:15Z
dc.date.available	2014-03-01T01:29:15Z
dc.date.issued	2008	en
dc.identifier.issn	0749-6036	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19182
dc.subject	Memory devices	en
dc.subject	Metallic	en
dc.subject	Nanocrystals	en
dc.subject	Nanoparticles	en
dc.subject	Retention time	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Data storage equipment	en
dc.subject.other	Electric properties	en
dc.subject.other	Hafnium	en
dc.subject.other	Hafnium compounds	en
dc.subject.other	Microscopic examination	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Nanostructures	en
dc.subject.other	Silica	en
dc.subject.other	Memory devices	en
dc.subject.other	Metallic	en
dc.subject.other	Nanocrystals	en
dc.subject.other	Retention time	en
dc.subject.other	Nanostructured materials	en
dc.title	Study of charge storage characteristics of memory devices embedded with metallic nanoparticles	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.spmi.2008.03.003	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.spmi.2008.03.003	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	The structural and electrical properties of thin silicon dioxide and hafnium oxide dielectric stacks with embedded gold nanoparticles obtained by electron-beam evaporation are reported. Transmission electron microscopy shows that the nanoparticles have a mean diameter of 2.6 nm and a sheet density of 3.3 x 10(12) cm(-2). High-frequency and quasi-static capacitance-voltage measurements of MOS capacitors reveal that charge injection and storage takes place in the nanoparticle dielectric stack at low gate voltages. Efficient charge trapping occurs only in the case of holes injected from the substrate. Programming and retention time measurements indicate that the fabricated nanoparticle dielectrics are attractive for low-voltage non-volatile memory applications. (C) 2008 Elsevier Ltd. All rights reserved.	en
heal.publisher	ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD	en
heal.journalName	Superlattices and Microstructures	en
dc.identifier.doi	10.1016/j.spmi.2008.03.003	en
dc.identifier.isi	ISI:000261200000026	en
dc.identifier.volume	44	en
dc.identifier.issue	4-5	en
dc.identifier.spage	483	en
dc.identifier.epage	488	en