dc.contributor.author |
Stamataki, M |
en |
dc.contributor.author |
Fasaki, I |
en |
dc.contributor.author |
Tsonos, G |
en |
dc.contributor.author |
Tsamakis, D |
en |
dc.contributor.author |
Kompitsas, M |
en |
dc.date.accessioned |
2014-03-01T01:29:51Z |
|
dc.date.available |
2014-03-01T01:29:51Z |
|
dc.date.issued |
2009 |
en |
dc.identifier.issn |
0040-6090 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/19378 |
|
dc.subject |
Atomic force microscopy (AFM) |
en |
dc.subject |
Hall effect |
en |
dc.subject |
Heat treatment |
en |
dc.subject |
Hydrogen |
en |
dc.subject |
Pulsed laser deposition (PLD) |
en |
dc.subject |
Sensors |
en |
dc.subject |
Structural properties |
en |
dc.subject |
Zinc oxide (ZnO) |
en |
dc.subject.classification |
Materials Science, Multidisciplinary |
en |
dc.subject.classification |
Materials Science, Coatings & Films |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
Annealing effects |
en |
dc.subject.other |
Atomic force microscopy (AFM) |
en |
dc.subject.other |
Constant temperature |
en |
dc.subject.other |
Crystallinities |
en |
dc.subject.other |
Deposition technique |
en |
dc.subject.other |
Gas sensing characteristics |
en |
dc.subject.other |
Hydrogen concentration |
en |
dc.subject.other |
Operating temperature |
en |
dc.subject.other |
Oxygen deficiency |
en |
dc.subject.other |
Post annealing |
en |
dc.subject.other |
Postdeposition heat treatment |
en |
dc.subject.other |
Reactive pulsed laser deposition |
en |
dc.subject.other |
Sensing property |
en |
dc.subject.other |
Structural investigation |
en |
dc.subject.other |
Transparent thin film |
en |
dc.subject.other |
Zinc oxide thin films |
en |
dc.subject.other |
ZnO |
en |
dc.subject.other |
ZnO thin film |
en |
dc.subject.other |
Annealing |
en |
dc.subject.other |
Atomic force microscopy |
en |
dc.subject.other |
Atoms |
en |
dc.subject.other |
Deposition |
en |
dc.subject.other |
Gas sensing electrodes |
en |
dc.subject.other |
Gyrators |
en |
dc.subject.other |
Hall effect |
en |
dc.subject.other |
Hydrogen |
en |
dc.subject.other |
Lasers |
en |
dc.subject.other |
Magnetic field effects |
en |
dc.subject.other |
Oxygen |
en |
dc.subject.other |
Programmable logic controllers |
en |
dc.subject.other |
Pulsed laser deposition |
en |
dc.subject.other |
Semiconducting zinc compounds |
en |
dc.subject.other |
Sensors |
en |
dc.subject.other |
Thermal effects |
en |
dc.subject.other |
Thin films |
en |
dc.subject.other |
X ray diffraction |
en |
dc.subject.other |
X ray diffraction analysis |
en |
dc.subject.other |
Zinc |
en |
dc.subject.other |
Zinc oxide |
en |
dc.subject.other |
Oxide films |
en |
dc.title |
Annealing effects on the structural, electrical and H2 sensing properties of transparent ZnO thin films, grown by pulsed laser deposition |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/j.tsf.2009.02.156 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/j.tsf.2009.02.156 |
en |
heal.language |
English |
en |
heal.publicationDate |
2009 |
en |
heal.abstract |
Transparent zinc oxide thin films were grown by reactive pulsed laser deposition on glass substrates. The substrates were kept at 200 degrees C constant temperature. Post-deposition heat treatment, applied to further promote crystallization and overcome any oxygen deficiency, yielded transparent thin films. Structural investigations carried out by atomic force microscopy (AFM) and X-ray diffraction (XRD), have shown a strong influence of deposition technique parameters and post-annealing on the crystallinity of the zinc oxide films. The gas sensing characteristics of these films were investigated towards different hydrogen concentrations (5000-30,000 ppm) at a selected operating temperature within the 150-230 degrees C range. (C) 2009 Elsevier B.V. All rights reserved. |
en |
heal.publisher |
ELSEVIER SCIENCE SA |
en |
heal.journalName |
Thin Solid Films |
en |
dc.identifier.doi |
10.1016/j.tsf.2009.02.156 |
en |
dc.identifier.isi |
ISI:000272733200069 |
en |
dc.identifier.volume |
518 |
en |
dc.identifier.issue |
4 |
en |
dc.identifier.spage |
1326 |
en |
dc.identifier.epage |
1331 |
en |