Application of piezoresistance effect in highly uniaxially strained p-Si and n-Si for current-carrier mobility increase

Kolomoets, V; Baidakov, V; Fedosov, A; Gorin, A; Ermakov, V; Liarokapis, E; Gromova, G; Kazbekova, B; Taimuratova, L; Orasgulyev, B

dc.contributor.author	Kolomoets, V	en
dc.contributor.author	Baidakov, V	en
dc.contributor.author	Fedosov, A	en
dc.contributor.author	Gorin, A	en
dc.contributor.author	Ermakov, V	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Gromova, G	en
dc.contributor.author	Kazbekova, B	en
dc.contributor.author	Taimuratova, L	en
dc.contributor.author	Orasgulyev, B	en
dc.date.accessioned	2014-03-01T01:29:52Z
dc.date.available	2014-03-01T01:29:52Z
dc.date.issued	2009	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19385
dc.subject.classification	Physics, Condensed Matter	en
dc.title	Application of piezoresistance effect in highly uniaxially strained p-Si and n-Si for current-carrier mobility increase	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/pssb.200880508	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssb.200880508	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	Uniaxially strained channels occur in silicon p-MOS transistors and n-MOS transistors (IEDM Tech. Dig., pp. 61-64 (2002) and pp. 978-980 (2003) [1,2]). Both longitudinal piezoresistance (PR) and transverse PR investigation in highly uniaxially strained p-Si(B) and n-Si(P) are presented. It is shown that the strong anisotropy of longitudinal PR and transverse PR are caused by the pressure-induced change of isoenergetic surface shape, i.e. by the change of heavy-hole effective mass and its anisotropy. In n-Si the change of the longitudinal PR and transverse PR at X{double pipe} [100] is determined by both the change of the f-transition probability with increasing pressure and the redistribution of electrons between the valleys with the effective mass m{double pipe} (longitudinal PR) and m{box drawings light up and horizontal} (transverse PR). © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/pssb.200880508	en
dc.identifier.isi	ISI:000264244500039	en
dc.identifier.volume	246	en
dc.identifier.issue	3	en
dc.identifier.spage	652	en
dc.identifier.epage	654	en