Development and application of a holistic model for the steady state growth of porous anodic alumina films

Patermarakis, G; Moussoutzanis, K

dc.contributor.author	Patermarakis, G	en
dc.contributor.author	Moussoutzanis, K	en
dc.date.accessioned	2014-03-01T01:30:09Z
dc.date.available	2014-03-01T01:30:09Z
dc.date.issued	2009	en
dc.identifier.issn	0013-4686	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19487
dc.subject	Holistic model	en
dc.subject	Lattice density and form variability	en
dc.subject	Porous anodic alumina	en
dc.subject	Steady state growth	en
dc.subject.classification	Electrochemistry	en
dc.subject.other	Aluminum	en
dc.subject.other	Aluminum sheet	en
dc.subject.other	Film growth	en
dc.subject.other	Metals	en
dc.subject.other	Nanocrystalline materials	en
dc.subject.other	Sulfuric acid	en
dc.subject.other	Anodic alumina films	en
dc.subject.other	Anodising	en
dc.subject.other	Barrier layers	en
dc.subject.other	Electrolyte interfaces	en
dc.subject.other	Growth mechanisms	en
dc.subject.other	Holistic model	en
dc.subject.other	Lattice density and form variability	en
dc.subject.other	Oxide interfaces	en
dc.subject.other	Oxide lattices	en
dc.subject.other	Pore walls	en
dc.subject.other	Porous anodic alumina	en
dc.subject.other	Porous anodic alumina films	en
dc.subject.other	Species transports	en
dc.subject.other	Steady state growth	en
dc.subject.other	Structural characteristics	en
dc.subject.other	Sulphuric acids	en
dc.subject.other	Thickness growths	en
dc.subject.other	Alumina	en
dc.title	Development and application of a holistic model for the steady state growth of porous anodic alumina films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.electacta.2008.11.064	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.electacta.2008.11.064	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	A holistic model was developed and applied to anodic alumina films galvanostatically grown in sulphuric acid solution at different anodising conditions thus characterised by different structural characteristics. The O2- and Al3+ species transport numbers near the metalloxide interface were determined that depended on both temperature and current density. The rate of film thickness growth was found to be proportional to the O2- anionic current through the barrier layer near the metalloxide interface. The results introduced a new growth mechanism theory embracing the rarefaction of barrier layer oxide lattice towards the metalloxide interface. The oxide density near the metalloxide is closely independent of anodising conditions and is related to the transformation of Al lattice to a transient oxide lattice about 37% rarer than that of gamma-Al2O3 that is further suitably transformed to denser, amorphous or nanocrystalline material as this oxide is shifted to the oxide vertical bar electrolyte interface and becomes the pore wall material. This gradual lattice density variability can explain many peculiar properties of anodic alumina films. (C) 2008 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Electrochimica Acta	en
dc.identifier.doi	10.1016/j.electacta.2008.11.064	en
dc.identifier.isi	ISI:000264743900006	en
dc.identifier.volume	54	en
dc.identifier.issue	9	en
dc.identifier.spage	2434	en
dc.identifier.epage	2443	en