Dynamic behavior of charge in MOS devices embedded with Pt and Au nanoparticles

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:30:14Z
dc.date.available	2014-03-01T01:30:14Z
dc.date.issued	2009	en
dc.identifier.issn	1369-8001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19512
dc.subject	Memory devices	en
dc.subject	Metallic nanoparticles	en
dc.subject	Nanocrystals	en
dc.subject	Retention time	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Au nanoparticle	en
dc.subject.other	Deep donor	en
dc.subject.other	Dielectric layer	en
dc.subject.other	Dynamic behaviors	en
dc.subject.other	Electrical measurement	en
dc.subject.other	Memory devices	en
dc.subject.other	Metallic nanoparticles	en
dc.subject.other	MOS structure	en
dc.subject.other	Oxide layer	en
dc.subject.other	Pt nanoparticles	en
dc.subject.other	Retention time	en
dc.subject.other	Silicon dioxide layers	en
dc.subject.other	Storage mechanism	en
dc.subject.other	Electric fields	en
dc.subject.other	Hafnium	en
dc.subject.other	MOS devices	en
dc.subject.other	Nanocrystals	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Platinum	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Silica	en
dc.subject.other	Gold	en
dc.title	Dynamic behavior of charge in MOS devices embedded with Pt and Au nanoparticles	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mssp.2009.09.002	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mssp.2009.09.002	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	We study two types of MOS structures that contain nanoparticles embedded between a silicon dioxide layer and a hafnium capping-oxide layer; the first structure contains Au nanoparticles while the second contains Pt nanoparticles. We compare the charge injection and storage mechanisms in these structures using electrical measurements and we demonstrate that the charge injection takes place under low electric field for both devices. We also find that the MOS structures with Au nanoparticles present significantly larger retention times in comparison to Pt nanoparticles; this behavior is attributed to the formation of deep donor states due to a limited Au diffusion in the dielectric layer. (C) 2009 Elsevier Ltd. All rights reserved.	en
heal.publisher	ELSEVIER SCI LTD	en
heal.journalName	Materials Science in Semiconductor Processing	en
dc.identifier.doi	10.1016/j.mssp.2009.09.002	en
dc.identifier.isi	ISI:000272821900013	en
dc.identifier.volume	12	en
dc.identifier.issue	1-2	en
dc.identifier.spage	57	en
dc.identifier.epage	63	en