Metallic nanoparticles for application in electronic non-volatile memories

Tsoukalas, D

dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:31:05Z
dc.date.available	2014-03-01T01:31:05Z
dc.date.issued	2009	en
dc.identifier.issn	1475-7435	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19737
dc.subject	Memories	en
dc.subject	MOS devices	en
dc.subject	Nanoparticles	en
dc.subject	Non-volatile	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	Metallic soaps	en
dc.subject.other	MOS devices	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Surface plasmon resonance	en
dc.subject.other	Data retentions	en
dc.subject.other	Low voltages	en
dc.subject.other	Memories	en
dc.subject.other	Metallic nanoparticles	en
dc.subject.other	Non-volatile	en
dc.subject.other	Nonvolatile memories	en
dc.subject.other	Possible solutions	en
dc.subject.other	Processing approaches	en
dc.subject.other	Research groups	en
dc.subject.other	Retention characteristics	en
dc.subject.other	Semiconductor nano particles	en
dc.subject.other	University of durhams	en
dc.subject.other	Volatile memories	en
dc.subject.other	Data storage equipment	en
dc.title	Metallic nanoparticles for application in electronic non-volatile memories	en
heal.type	journalArticle	en
heal.identifier.primary	10.1504/IJNT.2009.021706	en
heal.identifier.secondary	http://dx.doi.org/10.1504/IJNT.2009.021706	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	Nanoparticle memories have appeared during last years as a possible solution to overcome the scaling issue of electronic nonvolatile memories. Ultimately, we are looking for nanoparticle memories to significantly decrease the voltage needed to write/erase the memory without compromising its retention characteristics. As an alternative to semiconductor nanoparticles which have been intensively investigated, metallic nanoparticles have been recently also used since they have the potential for more versatile engineering of energy barriers. This would allow improved data retention for memory devices operating at low voltages. Processing approaches for metallic nanoparticle fabrication are addressed and corresponding memory devices performance is discussed. The work presented in this paper is a review of results obtained during the last four years within the Nanodevice Research group at NTUA in collaboration with IMEL/NCSR Demokritos and University of Durham. Copyright © 2009 Inderscience Enterprises Ltd.	en
heal.publisher	INDERSCIENCE ENTERPRISES LTD	en
heal.journalName	International Journal of Nanotechnology	en
dc.identifier.doi	10.1504/IJNT.2009.021706	en
dc.identifier.isi	ISI:000263037000004	en
dc.identifier.volume	6	en
dc.identifier.issue	1-2	en
dc.identifier.spage	35	en
dc.identifier.epage	45	en