Modeling and experiments on diffusion and activation of phosphorus in germanium

Tsouroutas, P; Tsoukalas, D; Zergioti, I; Cherkashin, N; Claverie, A

dc.contributor.author	Tsouroutas, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T01:31:07Z
dc.date.available	2014-03-01T01:31:07Z
dc.date.issued	2009	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19750
dc.subject.classification	Physics, Applied	en
dc.subject.other	Chemical profiles	en
dc.subject.other	Conventional annealing	en
dc.subject.other	Dopant activation	en
dc.subject.other	Dopant diffusion	en
dc.subject.other	Dopant loss	en
dc.subject.other	Dopant profile	en
dc.subject.other	Free electron concentration	en
dc.subject.other	Implantation damage	en
dc.subject.other	Laser annealing	en
dc.subject.other	Laser thermal	en
dc.subject.other	Mass spectroscopy	en
dc.subject.other	Melting threshold	en
dc.subject.other	ND : YAG lasers	en
dc.subject.other	Out-diffusion	en
dc.subject.other	P-diffusion	en
dc.subject.other	Phosphorus diffusion	en
dc.subject.other	Pile-up	en
dc.subject.other	Quadratic dependence	en
dc.subject.other	Structural defect	en
dc.subject.other	Temperature range	en
dc.subject.other	Thermal processing	en
dc.subject.other	Van der Pauw method	en
dc.subject.other	Annealing	en
dc.subject.other	Diffusion	en
dc.subject.other	Electric resistance	en
dc.subject.other	Germanium	en
dc.subject.other	Lasers	en
dc.subject.other	Mass spectrometry	en
dc.subject.other	Phosphorus	en
dc.subject.other	Pulsed laser applications	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Neodymium lasers	en
dc.title	Modeling and experiments on diffusion and activation of phosphorus in germanium	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.3117485	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.3117485	en
heal.identifier.secondary	094910	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	We report on phosphorus diffusion and activation related phenomena in germanium. We have used both conventional thermal processing and laser annealing by pulsed nanosecond Nd:YAG laser. Chemical profiles were obtained by secondary-ion-mass spectroscopy, sheet resistance was estimated by the van der Pauw method, and structural defects were monitored by transmission electron microscopy. Our study covers the temperature range from 440 to 750 degrees C, and we were able to efficiently simulate the dopant profiles within that temperature range, taking into account a quadratic dependence of the P diffusion coefficient on the free electron concentration. To achieve that we have taken into account dopant activation dependence on temperature as well as dopant pile-up near the surface and dopant loss owing to outdiffusion during the annealing. A combined laser thermal treatment above the melting threshold prior to conventional annealing allowed the elimination of the implantation damage, so we could perceive the influence of defects on both transient dopant diffusion and outdiffusion. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3117485]	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.3117485	en
dc.identifier.isi	ISI:000266263300184	en
dc.identifier.volume	105	en
dc.identifier.issue	9	en