Morphology and defect properties of the Ge-GeO2 interface

Tsetseris, L; Pantelides, ST

dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Pantelides, ST	en
dc.date.accessioned	2014-03-01T01:31:15Z
dc.date.available	2014-03-01T01:31:15Z
dc.date.issued	2009	en
dc.identifier.issn	0003-6951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19761
dc.subject	ab initio calculations	en
dc.subject	dangling bonds	en
dc.subject	defect states	en
dc.subject	elemental semiconductors	en
dc.subject	germanium	en
dc.subject	germanium compounds	en
dc.subject	interface roughness	en
dc.subject	interface states	en
dc.subject	passivation	en
dc.subject	semiconductor-insulator boundaries	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Atomic scale roughness	en
dc.subject.other	Defect property	en
dc.subject.other	Experimental data	en
dc.subject.other	First-principles calculation	en
dc.subject.other	Interface morphologies	en
dc.subject.other	Si technology	en
dc.subject.other	Fluorine	en
dc.subject.other	Germanium oxides	en
dc.subject.other	Morphology	en
dc.subject.other	Silicon	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Germanium	en
dc.title	Morphology and defect properties of the Ge-GeO2 interface	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.3280385	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.3280385	en
heal.identifier.secondary	262107	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	Ge-based devices, currently being pursued as replacement of their Si counterparts, typically contain a germanium oxide layer next to the substrate. Here we show using first-principles calculations that, in contrast to Si technology, hydrogenation and fluorination are not effective ways of passivating Ge-GeO2 interfacial Pb centers with a Ge dangling bond (DB). Moreover, we identify DB geometries that differ from the Pb structures and we find that the Ge-GeO2 boundary has a higher atomic-scale roughness than the Si-SiO2 interface. These key differences in interface morphology and defect properties are consistent with experimental data. © 2009 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.3280385	en
dc.identifier.isi	ISI:000273216900030	en
dc.identifier.volume	95	en
dc.identifier.issue	26	en