Pressure and magnetic field effects on Pr1-xCaxMnO3 thin films

Antonakos, A; Filippi, M; Auban-Senzier, P; Lampakis, D; Pasquier, CR; Prellier, W; Liarokapis, E

dc.contributor.author	Antonakos, A	en
dc.contributor.author	Filippi, M	en
dc.contributor.author	Auban-Senzier, P	en
dc.contributor.author	Lampakis, D	en
dc.contributor.author	Pasquier, CR	en
dc.contributor.author	Prellier, W	en
dc.contributor.author	Liarokapis, E	en
dc.date.accessioned	2014-03-01T01:31:42Z
dc.date.available	2014-03-01T01:31:42Z
dc.date.issued	2009	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19891
dc.subject	61.05.cp	en
dc.subject	74.62.Fj	en
dc.subject	75.47.Lx	en
dc.subject	78.30.-j	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	INSULATOR-METAL TRANSITION	en
dc.subject.other	GIANT MAGNETORESISTANCE	en
dc.subject.other	RAMAN-SPECTROSCOPY	en
dc.subject.other	MANGANITES	en
dc.subject.other	PR0.7CA0.3MNO3	en
dc.subject.other	LA1-XSRXMNO3	en
dc.subject.other	RESISTIVITY	en
dc.subject.other	STRAIN	en
dc.title	Pressure and magnetic field effects on Pr1-xCaxMnO3 thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/pssb.200880539	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssb.200880539	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	We report a systematic study of Pr1-x Cax MnO3 (x = 0.4 and 0.6) thin films grown on LaAlO3 (LAO) substrate (PCMO/LAO). X-ray diffraction measurements have shown that the PCMO/LAO film is [101]-oriented and under compressive strain due to the lattice mismatch. According to Raman spectroscopy the Jahn-Teller modes are suppressed under the application of pressure in the PCMO (x = 0.4) thin film. In particular, it was found that a pressure of 2 GPa suppresses the charge ordered state. Further high pressure measurements have confirmed that resistivity decreases linearly up to 2.4 GPa corresponding to a total reduction of about 35% in resistivity leading to a more conductive state on both concentrations. The temperature dependence of the resistivity has shown that the samples under pressure retain their semiconducting behavior. At ambient pressure the PCMO (x = 0.6) film shows a moderate magnetoresistance in the range 0-7 T and no metal to insulator transition (MIT). Raman spectroscopy confirmed that the application of a magnetic field of 1 T does not induce any remarkable changes on the electron-phonon interaction. Although, the hydrostatic pressure is not enough to induce a macroscopic metallic state, its effect is much greater than the one of the magnetic field. In addition, the effect of the 7T magnetic field appears the same at ambient pressure and 2.5 GPa. Therefore the two effects of hydrostatic pressure and magnetic field do not seem to be coupled, at least up to the magnitudes studied. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/pssb.200880539	en
dc.identifier.isi	ISI:000264244500033	en
dc.identifier.volume	246	en
dc.identifier.issue	3	en
dc.identifier.spage	622	en
dc.identifier.epage	625	en