Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticles

Beniakar, M; Kladas, A; Xanthakis, JP; Sargentis, Ch; Tsamakis, D

dc.contributor.author	Beniakar, M	en
dc.contributor.author	Kladas, A	en
dc.contributor.author	Xanthakis, JP	en
dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:32:12Z
dc.date.available	2014-03-01T01:32:12Z
dc.date.issued	2009	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20076
dc.subject	Metal nanoparticles	en
dc.subject	MOS structure	en
dc.subject	Non-volatile memories	en
dc.subject	Tunneling potential	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Charging process	en
dc.subject.other	Electrostatic field	en
dc.subject.other	Low voltages	en
dc.subject.other	Metal nanoparticles	en
dc.subject.other	Metallic nanoparticles	en
dc.subject.other	MOS structure	en
dc.subject.other	Non-volatile	en
dc.subject.other	Non-volatile memories	en
dc.subject.other	Three-dimensional (3D) analysis	en
dc.subject.other	Three-dimensional modeling	en
dc.subject.other	Tunneling potential	en
dc.subject.other	Tunneling process	en
dc.subject.other	Electric charge	en
dc.subject.other	Hafnium compounds	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Structural metals	en
dc.subject.other	Tunneling (excavation)	en
dc.subject.other	Three dimensional	en
dc.title	Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticles	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2009.03.073	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2009.03.073	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	This paper undertakes a three-dimensional (3D) analysis of the electrostatic fields developed in non volatile wSiO(2)/HfO2 memories (NVM) with metallic nanoparticles (m-NPs) embedded in the interface. Such a 3D approach is necessary in the case of m-NPs in contrast to the usual NVM based on Si NPs where a 1D analysis provides sufficient accuracy. The tunneling processes are then analyzed within this framework. It is concluded that the 3D potential will affect substantially the erase process at all voltages but in the charging process it will do so only at low voltages. (C) 2009 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2009.03.073	en
dc.identifier.isi	ISI:000267460100086	en
dc.identifier.volume	86	en
dc.identifier.issue	7-9	en
dc.identifier.spage	1856	en
dc.identifier.epage	1858	en