Crystal quality and conductivity type of (0 0 2) ZnO films on (1 0 0) Si substrates for device applications

Sardari, SE; Iliadis, AA; Stamataki, M; Tsamakis, D; Konofaos, N

dc.contributor.author	Sardari, SE	en
dc.contributor.author	Iliadis, AA	en
dc.contributor.author	Stamataki, M	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Konofaos, N	en
dc.date.accessioned	2014-03-01T01:33:06Z
dc.date.available	2014-03-01T01:33:06Z
dc.date.issued	2010	en
dc.identifier.issn	00381101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20318
dc.subject	Hetero-epitaxial growth	en
dc.subject	Laser epitaxy	en
dc.subject	Luminescence	en
dc.subject	Native defects	en
dc.subject	Semiconducting II-VI materials	en
dc.subject	Zinc compounds	en
dc.subject.other	A-thermal	en
dc.subject.other	Crystal qualities	en
dc.subject.other	Defect-related emission	en
dc.subject.other	Device application	en
dc.subject.other	Electrical conduction	en
dc.subject.other	Four-point	en
dc.subject.other	Growth conditions	en
dc.subject.other	Hall effect measurement	en
dc.subject.other	Heteroepitaxial growth	en
dc.subject.other	High quality	en
dc.subject.other	Interstitials	en
dc.subject.other	Laser epitaxy	en
dc.subject.other	Low growth temperature	en
dc.subject.other	Low temperatures	en
dc.subject.other	Lower pressures	en
dc.subject.other	N-type conductivity	en
dc.subject.other	Native defect	en
dc.subject.other	Optical qualities	en
dc.subject.other	Optimized conditions	en
dc.subject.other	Optimum growth conditions	en
dc.subject.other	Oxygen pressure	en
dc.subject.other	Oxygen-vacancy complexes	en
dc.subject.other	P-type conductivity	en
dc.subject.other	Polycrystalline structure	en
dc.subject.other	Room temperature	en
dc.subject.other	Room-temperature photoluminescence	en
dc.subject.other	Semiconducting II-VI materials	en
dc.subject.other	Si substrates	en
dc.subject.other	Silicon substrates	en
dc.subject.other	Structural and optical properties	en
dc.subject.other	Van der Pauw	en
dc.subject.other	Zinc oxide thin films	en
dc.subject.other	ZnO films	en
dc.subject.other	ZnO layers	en
dc.subject.other	Amorphous materials	en
dc.subject.other	Crystal growth	en
dc.subject.other	Defects	en
dc.subject.other	Deposition	en
dc.subject.other	Gyrators	en
dc.subject.other	Hall effect	en
dc.subject.other	Luminescence	en
dc.subject.other	Magnetic field effects	en
dc.subject.other	Metallic films	en
dc.subject.other	Optical properties	en
dc.subject.other	Oxide films	en
dc.subject.other	Oxygen	en
dc.subject.other	Pulsed laser deposition	en
dc.subject.other	Pulsed lasers	en
dc.subject.other	Reaction kinetics	en
dc.subject.other	Semiconducting films	en
dc.subject.other	Semiconducting zinc compounds	en
dc.subject.other	Semiconductor growth	en
dc.subject.other	Transition metal compounds	en
dc.subject.other	Vacancies	en
dc.subject.other	X ray diffraction	en
dc.subject.other	X ray photoelectron spectroscopy	en
dc.subject.other	Zinc	en
dc.subject.other	Zinc oxide	en
dc.subject.other	Oxygen vacancies	en
dc.title	Crystal quality and conductivity type of (0 0 2) ZnO films on (1 0 0) Si substrates for device applications	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.sse.2010.05.025	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2010.05.025	en
heal.publicationDate	2010	en
heal.abstract	Undoped high quality (0 0 2) zinc oxide thin films were grown on (1 0 0) silicon substrates by pulsed laser deposition (PLD). The films were developed at low growth temperatures between 200 and 300 °C, and a range of oxygen pressures from 8.5 × 10-5 to 2.6 × 10-4 Torr. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and room temperature photoluminescence (PL) have been carried out in order to verify the formation of ZnO layers and evaluate the structural and optical properties of the grown layers. Four-point Van Der Pauw Hall effect measurements were performed to evaluate the electrical conduction in the films. The grown ZnO films on Si were found to be perfectly (0 0 2) aligned polycrystalline structures with a best full-width at half-maximum (FWHM) value of 0.24° obtained for the optimum growth conditions. The PL study showed high optical quality with a substantially suppressed defect related emission band for the optimized conditions. Hall effect measurements showed that samples prepared at oxygen pressures of 1.0 × 10-4 Torr and above had p-type conductivity at room temperature, whereas samples grown at lower pressures were n-type. All samples showed n-type conductivity at low temperature (77 K) regardless of the growth conditions, which suggests a thermal competition between donor-like oxygen vacancies and/or oxygen vacancy complexes with hydrogen, and acceptor-like oxygen interstitials and possibly Zn vacancies. © 2010 Elsevier Ltd. All rights reserved.	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2010.05.025	en
dc.identifier.volume	54	en
dc.identifier.issue	10	en
dc.identifier.spage	1150	en
dc.identifier.epage	1154	en