Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium

Tsouroutas, P; Tsoukalas, D; Bracht, H

dc.contributor.author	Tsouroutas, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Bracht, H	en
dc.date.accessioned	2014-03-01T01:33:28Z
dc.date.available	2014-03-01T01:33:28Z
dc.date.issued	2010	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20438
dc.subject.classification	Physics, Applied	en
dc.subject.other	Activation level	en
dc.subject.other	Annealing temperatures	en
dc.subject.other	Chemical profiles	en
dc.subject.other	Co-doped	en
dc.subject.other	Co-doping	en
dc.subject.other	Codoping techniques	en
dc.subject.other	Diffusion behavior	en
dc.subject.other	Diffusion Coefficients	en
dc.subject.other	Dopant loss	en
dc.subject.other	Dopant profile	en
dc.subject.other	Free electron concentration	en
dc.subject.other	Germanium substrates	en
dc.subject.other	Junction depth	en
dc.subject.other	Out-diffusion	en
dc.subject.other	Phosphorus diffusion	en
dc.subject.other	Pile-ups	en
dc.subject.other	Quadratic dependence	en
dc.subject.other	Secondary ion mass spectroscopy	en
dc.subject.other	Temperature range	en
dc.subject.other	Thermal-annealing	en
dc.subject.other	Van der Pauw method	en
dc.subject.other	Annealing	en
dc.subject.other	Arsenic	en
dc.subject.other	Diffusion	en
dc.subject.other	Electric resistance	en
dc.subject.other	Germanium	en
dc.subject.other	Phosphorus	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Doping (additives)	en
dc.title	Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.3456998	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.3456998	en
heal.identifier.secondary	024903	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	We report arsenic and phosphorus diffusion experiments and activation related phenomena in codoped germanium substrates utilizing conventional thermal annealing. Chemical profiles were obtained by secondary ion mass spectroscopy, sheet resistance was estimated by the Van der Pauw method. Our study covers the temperature range from 600 to 750 degrees C. We accurately described the dopant profiles with a quadratic dependence of the dopants diffusion coefficient on the free electron concentration. In our simulations we considered the dopant pile-up near the surface and dopant loss owing to outdiffusion during the annealing. Although the double donor codoping technique exhibited no advantage over monodoping with P concerning the level of activation and junction depth, it was interesting to observe the different diffusion behavior of the two dopants. Whereas the diffusion of As indicates a retardation under codoping the diffusion of P remains either unaffected or is slightly enhanced by codoping. The activation, level of the codoped samples remains lower compared to the respective monodoped samples, except for the highest annealing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456998]	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.3456998	en
dc.identifier.isi	ISI:000280909900104	en
dc.identifier.volume	108	en
dc.identifier.issue	2	en