Hydrogen-dopant interactions in SiGe and strained Si

Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Pantelides, ST

dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Fleetwood, DM	en
dc.contributor.author	Schrimpf, RD	en
dc.contributor.author	Pantelides, ST	en
dc.date.accessioned	2014-03-01T01:33:36Z
dc.date.available	2014-03-01T01:33:36Z
dc.date.issued	2010	en
dc.identifier.issn	0003-6951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20486
dc.subject	ab initio calculations	en
dc.subject	electron traps	en
dc.subject	elemental semiconductors	en
dc.subject	Ge-Si alloys	en
dc.subject	hole traps	en
dc.subject	hydrogen	en
dc.subject	impurities	en
dc.subject	internal stresses	en
dc.subject	semiconductor doping	en
dc.subject	silicon	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Carrier traps	en
dc.subject.other	Charged state	en
dc.subject.other	Effect of hydrogen	en
dc.subject.other	First-principles calculation	en
dc.subject.other	Si-based devices	en
dc.subject.other	SiGe devices	en
dc.subject.other	SiGe substrates	en
dc.subject.other	Strained-Si	en
dc.subject.other	Complexation	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Hydrogen	en
dc.subject.other	Silicon alloys	en
dc.subject.other	Silicon	en
dc.title	Hydrogen-dopant interactions in SiGe and strained Si	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.3456395	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.3456395	en
heal.identifier.secondary	251905	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in complexes with dopants in strained Si (s-Si) and SiGe systems. We find that the charged state determines the tendency of hydrogen to be released from dopant sites and to shuttle between a SiGe substrate and a s-Si overlayer. In this way, the effect of hydrogen differs between accumulation and inversion cycles of s-Si and SiGe devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456395]	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.3456395	en
dc.identifier.isi	ISI:000279168100017	en
dc.identifier.volume	96	en
dc.identifier.issue	25	en