Non-melting annealing of silicon by CO2 laser

Florakis, A; Verrelli, E; Giubertoni, D; Tzortzis, G; Tsoukalas, D

dc.contributor.author	Florakis, A	en
dc.contributor.author	Verrelli, E	en
dc.contributor.author	Giubertoni, D	en
dc.contributor.author	Tzortzis, G	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:33:56Z
dc.date.available	2014-03-01T01:33:56Z
dc.date.issued	2010	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20626
dc.subject	Boron diffusion	en
dc.subject	CO2 laser	en
dc.subject	Dopant activation	en
dc.subject	Laser annealing	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Activation level	en
dc.subject.other	Annealing condition	en
dc.subject.other	Boron concentrations	en
dc.subject.other	Boron diffusion	en
dc.subject.other	Boron diffusions	en
dc.subject.other	Chemical characterization	en
dc.subject.other	CMOS nodes	en
dc.subject.other	Dopant activation	en
dc.subject.other	Dopant concentrations	en
dc.subject.other	Electrical activation	en
dc.subject.other	Laser annealing	en
dc.subject.other	Low energies	en
dc.subject.other	Plasma implantation	en
dc.subject.other	Power densities	en
dc.subject.other	Sheet resistance measurements	en
dc.subject.other	Short pulse duration	en
dc.subject.other	Silicon samples	en
dc.subject.other	Surface temperatures	en
dc.subject.other	Time-scales	en
dc.subject.other	Ultra shallow junction	en
dc.subject.other	Annealing	en
dc.subject.other	Diffusion in solids	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Electric resistance	en
dc.subject.other	Electric resistance measurement	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Boron	en
dc.title	Non-melting annealing of silicon by CO2 laser	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2009.09.140	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2009.09.140	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	In this work we investigate CO2. laser annealing at millisecond time scale for the fabrication of Ultra Shallow junctions. able to fulfill the requirements imposed for sub-45 nm CMOS nodes Silicon samples doped with Boron using BF3 plasma implantation technique at low energy (0.4 and 0.6 keV) were used to ensure ultra shallow as implanted boron concentration profiles Our aim is to achieve high electrical activation level of the dopant. while maintaining the Boron concentration profile as immobile as possible Samples have been irradiated at a variety of annealing conditions regarding the duration of the irradiation and the power density, however, in every case the peak surface temperature was kept in the range of 1080-1320 degrees C. Sheet resistance measurements indicate significant enhancement in the activation levels, while chemical characterization by means of SIMS, shows very limited movement of the dopant concentration profile, especially for short pulse duration conditions. (c) 2009 Elsevier B.V. All rights reserved	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2009.09.140	en
dc.identifier.isi	ISI:000275615100060	en
dc.identifier.volume	518	en
dc.identifier.issue	9	en
dc.identifier.spage	2551	en
dc.identifier.epage	2554	en