Thermally activated conduction mechanisms in Silicon Nitride MIS structures

Kanapitsas, A; Tsonos, C; Triantis, D; Stavrakas, I; Anastasiadis, C; Photopoulos, P; Pissis, P; Em Vamvakas ,V

dc.contributor.author	Kanapitsas, A	en
dc.contributor.author	Tsonos, C	en
dc.contributor.author	Triantis, D	en
dc.contributor.author	Stavrakas, I	en
dc.contributor.author	Anastasiadis, C	en
dc.contributor.author	Photopoulos, P	en
dc.contributor.author	Pissis, P	en
dc.contributor.author	Em Vamvakas ,V	en
dc.date.accessioned	2014-03-01T01:34:47Z
dc.date.available	2014-03-01T01:34:47Z
dc.date.issued	2010	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20858
dc.subject	Conduction mechanisms	en
dc.subject	DC conductivity	en
dc.subject	Silicon nitride	en
dc.subject	TSDC	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Ac Conductivity	en
dc.subject.other	Charge diffusion	en
dc.subject.other	Conduction Mechanism	en
dc.subject.other	Dc conductivity	en
dc.subject.other	High temperature	en
dc.subject.other	Low temperatures	en
dc.subject.other	MIS structure	en
dc.subject.other	Mobile carriers	en
dc.subject.other	Power law	en
dc.subject.other	Room temperature	en
dc.subject.other	Thermally activated	en
dc.subject.other	Thermally stimulated depolarisation currents	en
dc.subject.other	Switching circuits	en
dc.subject.other	Silicon nitride	en
dc.title	Thermally activated conduction mechanisms in Silicon Nitride MIS structures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2009.10.112	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2009.10.112	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	This publication reports on thermally activated currents in n-silicon/Si3N4/Al structures. The samples prepared were examined by means of I-V, C-V, ac conductivity and thermally stimulated depolarisation current (TSDC) measurements. The results indicate that DC conductivity is controlled by charge diffusion. Both conductivity and TSDC measurements indicate that mobile carriers which are trapped at the Si/nitride interface for low temperatures are de-trapped when temperature approaches room temperature resulting in a fast increase of DC conductivity. Additionally it is found that at high temperatures the ac conductivity follows a power law with respect to frequency where the exponent is close to two. Implications of this type of variation are also discussed. The results were used in order to explain the contribution of defects to the conduction mechanisms and the device behaviour. © 2009 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2009.10.112	en
dc.identifier.isi	ISI:000275615100015	en
dc.identifier.volume	518	en
dc.identifier.issue	9	en
dc.identifier.spage	2357	en
dc.identifier.epage	2360	en