An adjusted constant-current method to determine saturated and linear mode threshold voltage of MOSFETs

Bazigos, A; Bucher, M; Assenmacher, J; Decker, S; Grabinski, W; Papananos, Y

dc.contributor.author	Bazigos, A	en
dc.contributor.author	Bucher, M	en
dc.contributor.author	Assenmacher, J	en
dc.contributor.author	Decker, S	en
dc.contributor.author	Grabinski, W	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T01:35:04Z
dc.date.available	2014-03-01T01:35:04Z
dc.date.issued	2011	en
dc.identifier.issn	0018-9383	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20965
dc.subject	Charge-based model	en
dc.subject	metal-oxide-semiconductor field-effect transistor (MOSFET) compact model	en
dc.subject	moderate inversion	en
dc.subject	parameter determination	en
dc.subject	pocket implant	en
dc.subject	threshold voltage	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Charge-based model	en
dc.subject.other	Compact model	en
dc.subject.other	Moderate inversion	en
dc.subject.other	Parameter determination	en
dc.subject.other	pocket implant	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Dielectric devices	en
dc.subject.other	Field effect semiconductor devices	en
dc.subject.other	Lead oxide	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Threshold voltage	en
dc.subject.other	Transistor transistor logic circuits	en
dc.subject.other	Transistors	en
dc.subject.other	Vanadium	en
dc.subject.other	Drain current	en
dc.title	An adjusted constant-current method to determine saturated and linear mode threshold voltage of MOSFETs	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TED.2011.2164080	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TED.2011.2164080	en
heal.identifier.secondary	6003772	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to inconsistent results and incorrect interpretation of effects, such as drain-induced barrier lowering in advanced CMOS halo-implanted devices. The generalized adjusted CC method is based on the theory of the charge-based MOS transistor model. It introduces an adjusted current criterion, depending on VDS, allowing to coherently determine VTH for the entire range of VDS from linear operation to saturation. The method uses commonly available ID versus VG data with focus on moderate inversion. The method is validated with respect to the ideal surface potential model, and its suitability is demonstrated with technology-computer-aided-design data from a 65-nm CMOS technology and measured data from a 90-nm CMOS technology. Comparison with other widely used threshold voltage extraction methods is provided. © 2011 IEEE.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Transactions on Electron Devices	en
dc.identifier.doi	10.1109/TED.2011.2164080	en
dc.identifier.isi	ISI:000296099400013	en
dc.identifier.volume	58	en
dc.identifier.issue	11	en
dc.identifier.spage	3751	en
dc.identifier.epage	3758	en