Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6GHz, in a 90nm complementary metal-oxide-semiconductor (CMOS) process

Kytonaki, E-S; Simitsakis, P; Bazigos, A; Papananos, Y

dc.contributor.author	Kytonaki, E-S	en
dc.contributor.author	Simitsakis, P	en
dc.contributor.author	Bazigos, A	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T01:35:29Z
dc.date.available	2014-03-01T01:35:29Z
dc.date.issued	2011	en
dc.identifier.issn	0020-7217	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/21076
dc.subject	LNA	en
dc.subject	low power	en
dc.subject	magnetic feedback	en
dc.subject	Miller effect	en
dc.subject	RFIC design	en
dc.subject	sub-100nm CMOS	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.other	LNA	en
dc.subject.other	low power	en
dc.subject.other	magnetic feedback	en
dc.subject.other	Miller effects	en
dc.subject.other	RFIC design	en
dc.subject.other	Sub-100 nm	en
dc.subject.other	Design	en
dc.subject.other	Dielectric devices	en
dc.subject.other	Electric equipment protection	en
dc.subject.other	Electrostatic devices	en
dc.subject.other	Low noise amplifiers	en
dc.title	Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6GHz, in a 90nm complementary metal-oxide-semiconductor (CMOS) process	en
heal.type	journalArticle	en
heal.identifier.primary	10.1080/00207217.2010.520149	en
heal.identifier.secondary	http://dx.doi.org/10.1080/00207217.2010.520149	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	In this study, a low-noise amplifier (LNA) suitable for low-voltage operation is presented. The LNA operates at a frequency range between 5 and 6GHz. Its topology exploits magnetic feedback to achieve high reverse isolation and low noise performance without a significant degradation of the gain and linearity of the circuit. The design has been fabricated, considering full electrostatic discharge protection, in a modern 90nm complementary metal-oxide-semiconductor process. The measured performance, at 5.4GHz, shows a reverse isolation of -17.3dB, a gain of 10.4dB, a noise figure of 0.98dB and an input intercept point of 1.4 dBm. The circuit dissipates 12.5mW from a 1V supply, while it occupies 0.162mm2 of the die area. © 2011 Taylor & Francis.	en
heal.publisher	TAYLOR & FRANCIS LTD	en
heal.journalName	International Journal of Electronics	en
dc.identifier.doi	10.1080/00207217.2010.520149	en
dc.identifier.isi	ISI:000287023300008	en
dc.identifier.volume	98	en
dc.identifier.issue	2	en
dc.identifier.spage	235	en
dc.identifier.epage	248	en