MOCVD cobalt oxide deposition from inclusion complexes: Decomposition mechanism, structure, and properties

Papadopoulos, ND; Karayianni, HS; Tsakiridis, PE; Perraki, M; Sarantopoulou, E; Hristoforou, E

dc.contributor.author	Papadopoulos, ND	en
dc.contributor.author	Karayianni, HS	en
dc.contributor.author	Tsakiridis, PE	en
dc.contributor.author	Perraki, M	en
dc.contributor.author	Sarantopoulou, E	en
dc.contributor.author	Hristoforou, E	en
dc.date.accessioned	2014-03-01T01:36:18Z
dc.date.available	2014-03-01T01:36:18Z
dc.date.issued	2011	en
dc.identifier.issn	0013-4651	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/21283
dc.subject.classification	Electrochemistry	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.other	Abnormal behavior	en
dc.subject.other	Cobalt oxide films	en
dc.subject.other	Cobalt oxides	en
dc.subject.other	Decomposition mechanism	en
dc.subject.other	In-plane magnetization	en
dc.subject.other	Inclusion complex	en
dc.subject.other	MOCVD	en
dc.subject.other	Nano-crystalline structures	en
dc.subject.other	Novel precursors	en
dc.subject.other	Semiconducting behavior	en
dc.subject.other	Cobalt	en
dc.subject.other	Cobalt compounds	en
dc.subject.other	Decomposition	en
dc.subject.other	Electric properties	en
dc.subject.other	Magnetic properties	en
dc.subject.other	Metallorganic chemical vapor deposition	en
dc.subject.other	Organometallics	en
dc.subject.other	Semiconducting films	en
dc.subject.other	Silicides	en
dc.subject.other	Oxide films	en
dc.title	MOCVD cobalt oxide deposition from inclusion complexes: Decomposition mechanism, structure, and properties	en
heal.type	journalArticle	en
heal.identifier.primary	10.1149/1.3509698	en
heal.identifier.secondary	http://dx.doi.org/10.1149/1.3509698	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	A novel precursor based on the inclusion complex of beta-cyclodextrin with CoI2 is proposed for the deposition of cobalt oxide films by metallorganic chemical vapor deposition (MOCVD). Deposition is viable through an abnormal behavior of the inclusion molecules during heating. A decomposition mechanism based on experimental results is proposed, while the films are examined in terms of microstructure, electrical, and magnetic properties. A uniform, nanocrystalline structure of Co3O4 was revealed, along with impurities of silicide phases. The films presented a semiconducting behavior and minor in-plane magnetization. (c) 2010 The Electrochemical Society.	en
heal.publisher	ELECTROCHEMICAL SOC INC	en
heal.journalName	Journal of the Electrochemical Society	en
dc.identifier.doi	10.1149/1.3509698	en
dc.identifier.isi	ISI:000284697900056	en
dc.identifier.volume	158	en
dc.identifier.issue	1	en
dc.identifier.spage	P5	en
dc.identifier.epage	P13	en