Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

Charitidis, CA; Skarmoutsou, A; Nassiopoulou, AG; Dragoneas, A

dc.contributor.author	Charitidis, CA	en
dc.contributor.author	Skarmoutsou, A	en
dc.contributor.author	Nassiopoulou, AG	en
dc.contributor.author	Dragoneas, A	en
dc.date.accessioned	2014-03-01T01:36:22Z
dc.date.available	2014-03-01T01:36:22Z
dc.date.issued	2011	en
dc.identifier.issn	09215093	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/21295
dc.subject	Hardness	en
dc.subject	Nanoindentation	en
dc.subject	Porous silicon membranes	en
dc.subject	Young's modulus	en
dc.subject.other	Berkovich indenters	en
dc.subject.other	Bulk crystalline	en
dc.subject.other	Depth-sensing nanoindentation	en
dc.subject.other	Field emission scanning electron microscopy	en
dc.subject.other	Hardness and elastic modulus	en
dc.subject.other	Mesoporous structures	en
dc.subject.other	Nano-scale deformation	en
dc.subject.other	Nanomechanical property	en
dc.subject.other	p-Si layers	en
dc.subject.other	P-type	en
dc.subject.other	P-type Si	en
dc.subject.other	Porous si	en
dc.subject.other	Porous silicon membranes	en
dc.subject.other	Si wafer	en
dc.subject.other	Thick porous silicon	en
dc.subject.other	Young's Modulus	en
dc.subject.other	Anisotropy	en
dc.subject.other	Crystalline materials	en
dc.subject.other	Deformation	en
dc.subject.other	Elastic moduli	en
dc.subject.other	Elasticity	en
dc.subject.other	Field emission microscopes	en
dc.subject.other	Hardness	en
dc.subject.other	Microstructure	en
dc.subject.other	Nanoindentation	en
dc.subject.other	Porous silicon	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Silicon	en
dc.subject.other	Wear resistance	en
dc.subject.other	Silicon wafers	en
dc.title	Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.msea.2011.08.051	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.msea.2011.08.051	en
heal.publicationDate	2011	en
heal.abstract	The nanomechanical properties and the nanoscale deformation of thick porous Si (PSi) layers of two different morphologies, grown electrochemically on p-type and p+-type Si wafers were investigated by the depth-sensing nanoindentation technique over a small range of loads using a Berkovich indenter and were compared with those of bulk crystalline Si. The microstructure of the thick PSi layers was characterized by field emission scanning electron microscopy. PSi layers on p+-type Si show an anisotropic mesoporous structure with straight vertical pores of diameter in the range of 30-50. nm, while those on p-type Si show a sponge like mesoporous structure. The effect of the microstructure on the mechanical properties of the layers is discussed. It is shown that the hardness and Young's modulus of the PSi layers exhibit a strong dependence on their microstructure. In particular, PSi layers with the anisotropic straight vertical pores show higher hardness and elastic modulus values than sponge-like layers. However, sponge-like PSi layers reveal less plastic deformation and higher wear resistance compared with layers with straight vertical pores. © 2011 Elsevier B.V.	en
heal.journalName	Materials Science and Engineering A	en
dc.identifier.doi	10.1016/j.msea.2011.08.051	en
dc.identifier.volume	528	en
dc.identifier.issue	29-30	en
dc.identifier.spage	8715	en
dc.identifier.epage	8722	en