Effect of configuration crossover on the electronic Raman scattering by 4f multiplets

Guntherodt, G; Jayaraman, A; Anastassakis, E; Bucher, E; Bach, H

dc.contributor.author	Guntherodt, G	en
dc.contributor.author	Jayaraman, A	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Bucher, E	en
dc.contributor.author	Bach, H	en
dc.date.accessioned	2014-03-01T01:38:19Z
dc.date.available	2014-03-01T01:38:19Z
dc.date.issued	1981	en
dc.identifier.issn	00319007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/22041
dc.title	Effect of configuration crossover on the electronic Raman scattering by 4f multiplets	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevLett.46.855	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevLett.46.855	en
heal.publicationDate	1981	en
heal.abstract	The effect of configuration crossover on excited 4f6(FJ7) levels has been investigated by electronic Raman scattering in Sm1-xYxSe and Sm1-xYxS. The multiplet levels are wiped out when they merge with the conduction band, or when interacting with phonons. Polarized Raman-scattering data on Sm1-xYxS for x>0.15 show that the contribution from J-multiplet levels is unobservable and that the peak near 250 cm-1 arises from optic phonons and not from J=0J=1 excitations. © 1981 The American Physical Society.	en
heal.journalName	Physical Review Letters	en
dc.identifier.doi	10.1103/PhysRevLett.46.855	en
dc.identifier.volume	46	en
dc.identifier.issue	13	en
dc.identifier.spage	855	en
dc.identifier.epage	858	en