Angular dispersion of ""backward"" Raman scattering: Weakly absorbing cubic materials (Si)

Anastassakis, E; Raptis, YS

dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Raptis, YS	en
dc.date.accessioned	2014-03-01T01:38:48Z
dc.date.available	2014-03-01T01:38:48Z
dc.date.issued	1985	en
dc.identifier.issn	00218979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/22379
dc.subject.other	ELECTROMAGNETIC WAVES	en
dc.subject.other	RAMAN SCATTERING	en
dc.subject.other	ANGULAR DISPERSION	en
dc.subject.other	ANISOTROPIC GEOMETRICAL FACTORS	en
dc.subject.other	BACKWARD RAMAN SCATTERING	en
dc.subject.other	SEMICONDUCTING SILICON	en
dc.title	Angular dispersion of ""backward"" Raman scattering: Weakly absorbing cubic materials (Si)	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.334693	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.334693	en
heal.publicationDate	1985	en
heal.abstract	We have shown that the angular distribution of Raman scattering power from the surface of diamond-type opaque materials can be adequately described by use of classical optics. It turns out that within the commonly-used nearly backward scattering geometries there are significant variations of the scattered power due to purely geometrical factors. Only crystals with small extinction coefficients are considered. Families of curves for the scattered power are derived in terms of the angles of incidence and detection and of the index of refraction for three of the most widely-used crystal orientations. The analysis reveals the optimum scattering configuration for a given geometrical situation and provides a quantitative measure for the deviation from the selection rules when a ""backward"" geometry for forbidden scattering is less than exact. The importance of incidence and/or detection at the Brewster angle is examined. The experimental data obtained in Si are consistent with the theoretical predictions. The applicability of these results to other situations is discussed.	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.334693	en
dc.identifier.volume	57	en
dc.identifier.issue	3	en
dc.identifier.spage	920	en
dc.identifier.epage	928	en