Angular dispersion of ""backward"" Raman scattering: Absorbing III-V semiconductors (GaAs)

Anastassiadou, A; Raptis, YS; Anastassakis, E

dc.contributor.author	Anastassiadou, A	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:38:55Z
dc.date.available	2014-03-01T01:38:55Z
dc.date.issued	1986	en
dc.identifier.issn	00218979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/22476
dc.title	Angular dispersion of ""backward"" Raman scattering: Absorbing III-V semiconductors (GaAs)	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.337080	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.337080	en
heal.publicationDate	1986	en
heal.abstract	A previously developed model for the angular dispersion of Raman scattering power from the surface of absorbing centrosymmetric cubic materials is extended to absorbing materials of the zinc blende type. Independent expressions have been obtained which give the scattered power due to the longitudinal and transverse long-wavelength optical phonons as a function of external scattering geometry parameters; from these calculations, it has been found that the ratio of the scattered powers shows significant dependence on the angles of incidence and detection. These results provide a quantitative method in assessing the effects of choosing an approximate rather than the exact backward scattering geometry. Experimental results obtained from GaAs are in very good agreement with the predictions of the model. Examples of physical situations are given where angular dispersion corrections become necessary.	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.337080	en
dc.identifier.volume	60	en
dc.identifier.issue	8	en
dc.identifier.spage	2924	en
dc.identifier.epage	2931	en