Polycrystalline Si under strain: Elastic and lattice-dynamical considerations

Anastassakis, E; Liarokapis, E

dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Liarokapis, E	en
dc.date.accessioned	2014-03-01T01:39:14Z
dc.date.available	2014-03-01T01:39:14Z
dc.date.issued	1987	en
dc.identifier.issn	00218979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/22630
dc.title	Polycrystalline Si under strain: Elastic and lattice-dynamical considerations	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.339296	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.339296	en
heal.publicationDate	1987	en
heal.abstract	Expressions are derived for the effective phonon deformation potentials of polycrystalline materials, based on the properties of tensor invariants and the Voigt-Reuss-Hill averages [Proc. Phys. Soc. London Sect. A 65, 349 (1952)]. These results, and similar ones for the elastic constants, are used to determine the effect of strains on the long-wavelength optical phonons exhibited by such materials. Application to polycrystalline Si shows that under a uniaxial or biaxial stress, the triply degenerate phonons split into singlet and doublet components that shift at different rates and appear indistinguishably in the Raman spectrum. The implications of such effects on the Raman band shape are discussed.	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.339296	en
dc.identifier.volume	62	en
dc.identifier.issue	8	en
dc.identifier.spage	3346	en
dc.identifier.epage	3352	en