Electron and hole mobilities in lightly doped silicon

Misiakos, K; Tsamakis, D

dc.contributor.author	Misiakos, K	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:42:33Z
dc.date.available	2014-03-01T01:42:33Z
dc.date.issued	1994	en
dc.identifier.issn	00036951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/23870
dc.title	Electron and hole mobilities in lightly doped silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.111721	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.111721	en
heal.publicationDate	1994	en
heal.abstract	The electron and hole mobilities were measured between 78 and 340 K. The method used is based on the frequency dependence of the conductance and the capacitance of a high resistivity diode biased in high injection. The method is insensitive to uncertainties regarding the ionized dopant densities. In the temperature range from 170 to 340 K the carrier mobilities vary as T -a, where a=2.34±0.08 for electrons while for holes a=2.85±0.05. At 77.8 K the hole mobility is 14000±400 cm 2/V s while the electron mobility is 24000±800 cm 2/V s.	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.111721	en
dc.identifier.volume	64	en
dc.identifier.issue	15	en
dc.identifier.spage	2007	en
dc.identifier.epage	2009	en