MODELING AND SIMULATION OF ABNORMAL-BEHAVIOR OF THICK-FILM TIN OXIDE GAS SENSORS IN CO

SKAFIDAS, PD; VLACHOS, DS; AVARITSIOTIS, JN

dc.contributor.author	SKAFIDAS, PD	en
dc.contributor.author	VLACHOS, DS	en
dc.contributor.author	AVARITSIOTIS, JN	en
dc.date.accessioned	2014-03-01T01:42:53Z
dc.date.available	2014-03-01T01:42:53Z
dc.date.issued	1994	en
dc.identifier.issn	0925-4005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/23969
dc.subject	MODELING	en
dc.subject	MONTE CARLO SIMULATIONS	en
dc.subject	TIN OXIDE GAS SENSORS	en
dc.subject	CARBON MONOXIDE	en
dc.subject.classification	Chemistry, Analytical	en
dc.subject.classification	Electrochemistry	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	CARBON-MONOXIDE	en
dc.subject.other	MONTE-CARLO	en
dc.subject.other	SURFACES	en
dc.subject.other	OXYGEN	en
dc.subject.other	ADSORPTION	en
dc.subject.other	SNO2(110)	en
dc.subject.other	OXIDATION	en
dc.subject.other	SNO2	en
dc.title	MODELING AND SIMULATION OF ABNORMAL-BEHAVIOR OF THICK-FILM TIN OXIDE GAS SENSORS IN CO	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1994	en
heal.abstract	A new model is proposed that takes into account oxygen vacancies in tin oxide resistive-type gas sensors, assuming that lattice oxygen modifies the rate of oxygen adsorption. Applying this hypothesis in a Monte Carlo simulation, effects observed in thick-film samples are explained, Moreover, computational techniques have been used in order to simulate different thick-film structures, and the role of both surface coverage and reduction in the sensing mechanism is investigated. The simulation results are in good qualitative agreement with the experimental results obtained from our samples. In particular, phenomena like undershoot and overshoot of the sample's resistance, very long recovery times and poisoning of the sensor surface are discussed.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	SENSORS AND ACTUATORS B-CHEMICAL	en
dc.identifier.isi	ISI:A1994PM94400006	en
dc.identifier.volume	21	en
dc.identifier.issue	2	en
dc.identifier.spage	109	en
dc.identifier.epage	121	en