MOSFET MODELING FOR ANALOG CIRCUIT CAD - PROBLEMS AND PROSPECTS

TSIVIDIS, YP; SUYAMA, K

dc.contributor.author	TSIVIDIS, YP	en
dc.contributor.author	SUYAMA, K	en
dc.date.accessioned	2014-03-01T01:42:53Z
dc.date.available	2014-03-01T01:42:53Z
dc.date.issued	1994	en
dc.identifier.issn	0018-9200	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/23971
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.title	MOSFET MODELING FOR ANALOG CIRCUIT CAD - PROBLEMS AND PROSPECTS	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1994	en
heal.abstract	The requirements for good MOSFET modeling are discussed, as they apply to usage in analog and mixed analog-digital design. A set of benchmark tests that can be easily performed by the reader are given, and it is argued that most CAD models today cannot pass all the tests, even for simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are suggested. The issue of parameter extraction is addressed. Finally, the context of model development and usage is considered, and it is argued that some of the factors responsible for the problems encountered in the modeling effort are of a nontechnical nature.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE JOURNAL OF SOLID-STATE CIRCUITS	en
dc.identifier.isi	ISI:A1994NG60400007	en
dc.identifier.volume	29	en
dc.identifier.issue	3	en
dc.identifier.spage	210	en
dc.identifier.epage	216	en