Electrical and structural characterization of wafer bonded non-annealed Simox

Tsoukalas, D; Dimitrakis, P; Stoemenos, J; Papaioannou, G

dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Stoemenos, J	en
dc.contributor.author	Papaioannou, G	en
dc.date.accessioned	2014-03-01T01:43:07Z
dc.date.available	2014-03-01T01:43:07Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24052
dc.subject	Wafer Bonding	en
dc.title	Electrical and structural characterization of wafer bonded non-annealed Simox	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0167-9317(95)00100-M	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0167-9317(95)00100-M	en
heal.publicationDate	1995	en
heal.abstract	The formation of a BESOI structures where the silicon overlayer originates from non-annealed SIMOX is described. The method is applied for the first time and it's intention is to provide an accurate way to control the thickness of the Si-film. The structural characteristics of the Si-overlayer and the electrical characteristics of the bonded interface are presented.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/0167-9317(95)00100-M	en