SIMPLE RECONCILIATION MOSFET MODEL VALID IN ALL REGIONS

TSIVIDIS, Y; SUYAMA, K; VAVELIDIS, K

dc.contributor.author	TSIVIDIS, Y	en
dc.contributor.author	SUYAMA, K	en
dc.contributor.author	VAVELIDIS, K	en
dc.date.accessioned	2014-03-01T01:44:09Z
dc.date.available	2014-03-01T01:44:09Z
dc.date.issued	1995	en
dc.identifier.issn	0013-5194	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24280
dc.subject	MOSFET MODELS	en
dc.subject	SEMICONDUCTOR DEVICE MODELS	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.title	SIMPLE RECONCILIATION MOSFET MODEL VALID IN ALL REGIONS	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1995	en
heal.abstract	A single-expression MOSFET model is proposed. The model is related to a recently published one, but includes explicitly the threshold voltage at any value of the source-substrate bias. Very good accuracy in all regions, including moderate inversion, is demonstrated. The model reduces to well established expressions in particular regions.	en
heal.publisher	IEE-INST ELEC ENG	en
heal.journalName	ELECTRONICS LETTERS	en
dc.identifier.isi	ISI:A1995QQ51700064	en
dc.identifier.volume	31	en
dc.identifier.issue	6	en
dc.identifier.spage	506	en
dc.identifier.epage	508	en