Surface-related phonon mode in porous GaP

Raptis, Y; Anastassakis, E

dc.contributor.author	Raptis, Y	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:44:34Z
dc.date.available	2014-03-01T01:44:34Z
dc.date.issued	1996	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24409
dc.subject	Light Scattering	en
dc.subject	Raman Spectroscopy	en
dc.title	Surface-related phonon mode in porous GaP	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0038-1098(95)00677-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0038-1098(95)00677-X	en
heal.publicationDate	1996	en
heal.abstract	Porous GaP layers prepared by electrochemical anodization of (1 0 0) and (1 1 1) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397 cm−1 was observed in porous GaP. The process of anodization results in downward shifts of the TO and LO phonon frequencies, which are attributed to phonon	en
heal.journalName	Solid State Communications	en
dc.identifier.doi	10.1016/0038-1098(95)00677-X	en