Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells

Veliadis, JVD; Khurgin, JB; Ding, YJ

dc.contributor.author	Veliadis, JVD	en
dc.contributor.author	Khurgin, JB	en
dc.contributor.author	Ding, YJ	en
dc.date.accessioned	2014-03-01T01:44:43Z
dc.date.available	2014-03-01T01:44:43Z
dc.date.issued	1996	en
dc.identifier.issn	00189197	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24459
dc.title	Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/3.517015	en
heal.identifier.secondary	http://dx.doi.org/10.1109/3.517015	en
heal.publicationDate	1996	en
heal.abstract	The feasibility of the enhancement of the acoustic-phonon limited intersubband transition rate through impurity scattering has been theoretically investigated in double asymmetric-coupled quantum wells. The dependence of the acoustic-phonon rate on the barrier thickness and the effect of the position of the δ-doped region on the impurity rate have been treated rigorously. A 10-Å-doped region with a 1010-cm-2-sheet density can enhance the acoustic-phonon transition limit by more than an order of magnitude. This allows for the design of intersubband lasers in which population inversion between acoustic-phonon limited discrete conduction-band states is achieved by impurity scattering and control of barrier thickness.	en
heal.journalName	IEEE Journal of Quantum Electronics	en
dc.identifier.doi	10.1109/3.517015	en
dc.identifier.volume	32	en
dc.identifier.issue	7	en
dc.identifier.spage	1155	en
dc.identifier.epage	1160	en