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Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells

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dc.contributor.author Veliadis, JVD en
dc.contributor.author Khurgin, JB en
dc.contributor.author Ding, YJ en
dc.date.accessioned 2014-03-01T01:44:43Z
dc.date.available 2014-03-01T01:44:43Z
dc.date.issued 1996 en
dc.identifier.issn 00189197 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/24459
dc.title Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells en
heal.type journalArticle en
heal.identifier.primary 10.1109/3.517015 en
heal.identifier.secondary http://dx.doi.org/10.1109/3.517015 en
heal.publicationDate 1996 en
heal.abstract The feasibility of the enhancement of the acoustic-phonon limited intersubband transition rate through impurity scattering has been theoretically investigated in double asymmetric-coupled quantum wells. The dependence of the acoustic-phonon rate on the barrier thickness and the effect of the position of the δ-doped region on the impurity rate have been treated rigorously. A 10-Å-doped region with a 1010-cm-2-sheet density can enhance the acoustic-phonon transition limit by more than an order of magnitude. This allows for the design of intersubband lasers in which population inversion between acoustic-phonon limited discrete conduction-band states is achieved by impurity scattering and control of barrier thickness. en
heal.journalName IEEE Journal of Quantum Electronics en
dc.identifier.doi 10.1109/3.517015 en
dc.identifier.volume 32 en
dc.identifier.issue 7 en
dc.identifier.spage 1155 en
dc.identifier.epage 1160 en


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